71T75802S133BGI

Overview

The Renesas Electronics Corporation 71T75802S133BGI is a 18 Megabit Synchronous Static Random Access Memory (SRAM) device organized as 1M x 18. It utilizes Zero Bus Turnaround (ZBT) technology to eliminate dead cycles during bus direction changes. The component operates with a maximum clock frequency of 133 MHz and features a typical access time of 4.2 ns. It requires a core voltage supply between 2.375V and 2.625V. The device is housed in a 119-pin Plastic Ball Grid Array (PBGA) package measuring 14x22 mm. It supports surface mount installation and functions within an industrial temperature range of -40°C to +85°C.

Feature Summary

• Zero Bus Turnaround architecture eliminates dead cycles between read and write operations
• Internally synchronized output buffer enable removes the need for external OE control
• Single R/W control pin simplifies interface logic requirements
• Positive clock-edge triggered registers support fully pipelined applications

Applications

• High-performance embedded systems requiring fast memory access
• Network infrastructure equipment utilizing parallel SRAM interfaces
• Industrial control systems operating in extended temperature environments
• Automotive electronics demanding reliable synchronous memory solutions

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels due to end-of-life status. Confirm RoHS compliance specifications against specific revision markings, as environmental certifications may vary by production batch. Ensure proper handling procedures are followed for moisture-sensitive level 3 devices. Validate that the 119-PBGA footprint matches the target PCB design constraints before finalizing procurement orders.

Selection Notes

Select this component when system requirements demand 18Mb capacity with 133 MHz synchronous operation. The ZBT feature is critical for applications needing minimal latency during bus turnaround scenarios. Ensure the design accommodates the 2.5V core voltage tolerance and the 119-pin BGA thermal dissipation needs. Consider the -40°C to +85°C operating range suitability for the intended deployment environment compared to commercial grade alternatives.

Part Context

This part belongs to the IDT 71T75802 family of high-speed synchronous SRAMs manufactured by Renesas Electronics. The series is characterized by its ZBT technology, which optimizes data throughput by removing wait states inherent in traditional synchronous memories. The 71T75802 variant specifically offers 18-bit data width organization, distinguishing it from other density options within the same architectural lineage designed for different bandwidth requirements.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. The component is listed as End-of-Life (EOL). Designers should consult official Renesas resources for current lifecycle status and potential obsolescence management strategies.