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Product Detailed Parameters
- Description:IC SRAM 18MBIT PARALLEL 100TQFP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:18Mbit
- Memory Organization:1M x 18
- Memory Interface:Parallel
- Clock Frequency:133 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:2.375V ~ 2.625V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:4.2 ns
- Grade:-
- Qualification:-
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Overview
The Renesas Electronics Corporation 71T75802S133PFG is a 18 Mbit synchronous static random access memory (SRAM) organized as 1M x 18. It operates with a maximum clock frequency of 133 MHz and features an access time of 4.2 ns. The device utilizes a parallel interface and is housed in a 100-pin TQFP package. Power supply requirements range from 2.375 V to 2.625 V, with a maximum power consumption of 195 mA. It supports single data rate (SDR) operations and functions within a commercial temperature range of 0°C to +70°C.
Feature Summary
- Zero Bus Turnaround (ZBT) architecture eliminates dead cycles between read and write operations.
- Fully pipelined design with internally synchronized output buffer enable for simplified control.
- Supports individual byte write capabilities via dedicated control pins.
- Includes boundary scan JTAG interface compliant with IEEE 1149.1 standards.
Applications
- High-performance embedded systems requiring fast data buffering
- Network infrastructure equipment
- Industrial automation controllers
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and moisture sensitivity level prior to assembly. Check for recent product change notifications regarding labeling or sourcing updates. Ensure proper handling procedures are followed due to humidity sensitivity classifications.
Selection Notes
Select this component for applications demanding low-latency memory access with zero bus turnaround efficiency. Consider the 100-pin TQFP package constraints for PCB layout. Evaluate thermal management needs given the specified operating temperature range and power consumption limits. Ensure voltage supplies remain within the strict 2.375 V to 2.625 V window for reliable operation.
Part Context
This part belongs to the 71T75802 series of ZBT synchronous SRAMs. It shares architectural similarities with other variants like the 71T75802S133BGGI but differs in packaging and environmental ratings. The series is designed to replace asynchronous memories in high-speed digital designs where bus turnaround latency is critical.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing system buses if considering alternative vendors or newer generation parts from the same family.
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