71T75802S133PFGI8

Overview

The Renesas Electronics Corporation 71T75802S133PFGI8 is a 18 Mbit synchronous static random-access memory (SRAM) organized as 1M x 18. It operates with a maximum clock frequency of 133 MHz and features an access time of 4.2 ns. The device utilizes a parallel interface and functions within a supply voltage range of 2.375 V to 2.625 V, with a maximum power current of 195 mA. It is housed in a 100-pin TQFP package suitable for surface mount technology. The component supports an industrial operating temperature range from 0°C to +70°C.

Feature Summary

• Zero Bus Turnaround (ZBT) architecture eliminates dead cycles between read and write operations.
• Internally synchronized output buffer enable removes the need for external OE control.
• Single R/W control pin simplifies interface logic for fully pipelined applications.
• Supports four-word burst capability in either interleaved or linear modes.

Applications

• High-performance embedded systems requiring fast data access
• Network infrastructure equipment
• Industrial automation controllers

Procurement Notes

Verify the specific suffix 'I8' against official Renesas documentation to confirm it denotes the industrial temperature grade and tape-and-reel packaging format. Cross-reference the part number with the manufacturer's latest product change notices to ensure compliance with current RoHS standards and moisture sensitivity levels before procurement.

Selection Notes

Select this component when a 18 Mbit capacity with 133 MHz synchronous performance is required in a 100-pin TQFP form factor. Ensure the design environment accommodates the specified 2.5V core voltage and 0°C to +70°C operating range. Confirm that the ZBT interface compatibility matches the host system's memory controller requirements.

Part Context

This part belongs to the 71T75802 series of Zero Bus Turnaround SRAMs. The series is designed to provide high-speed data storage with efficient bus turnaround capabilities. Variants in the series differ by speed grade, package type, and temperature rating, offering flexibility for various embedded memory applications.

Replacement Considerations

Officially documented substitutes include the 71T75902S75PFGI8. Verify electrical compatibility and pinout alignment before substitution.

FAQ

What is the memory organization of the 71T75802S133PFGI8?

The memory is organized as 1M x 18, providing a total capacity of 18 Mbits.

Does this SRAM support burst mode operations?

Yes, it supports a four-word burst capability in either interleaved or linear modes.