71T75802S150BGG8

71T75802S150BGG8

  • Description:IC SRAM 18MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:cdffa50d6ad5 Category: Brand:

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Product Detailed Parameters

  • Description:IC SRAM 18MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:18Mbit
  • Memory Organization:1M x 18
  • Memory Interface:Parallel
  • Clock Frequency:150 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:2.375V ~ 2.625V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:3.8 ns
  • Grade:-
  • Qualification:-

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71T75802S150BGG8

Overview

The Renesas Electronics Corporation 71T75802S150BGG8 is a 18 Mbit synchronous static random access memory (SRAM) device organized as 1M x 18. It utilizes Zero Bus Turnaround (ZBT) technology to eliminate dead cycles between read and write operations, supporting a maximum clock frequency of 150 MHz with a 3.8 ns access time. The component operates on a 2.5V core voltage supply within a range of 2.375V to 2.625V. It is housed in a 119-pin plastic ball grid array (PBGA) package measuring 14x22 mm and supports an operating temperature range of 0°C to 70°C.

Feature Summary

  • Zero Bus Turnaround architecture eliminates bus turnaround dead cycles between read and write transitions.
  • Single R/W control pin simplifies interface logic by removing the need for separate output enable signals.
  • Internally synchronized output buffers ensure data stability without external control requirements.
  • Positive clock-edge triggered registers for address, data, and control signals support fully pipelined applications.

Applications

  • High-speed digital signal processing systems requiring low-latency memory access
  • Industrial automation controllers utilizing ZBT SRAM interfaces
  • Embedded systems designed for 2.5V core voltage operation

Procurement Notes

Verify component authenticity through authorized channels due to discontinuation status. Confirm package integrity and moisture sensitivity level handling procedures prior to assembly. Cross-reference datasheet revisions to ensure compatibility with existing design specifications. Validate RoHS compliance status against specific project regulatory requirements before procurement finalization.

Selection Notes

Select this component when system architecture requires 18-bit data width and synchronous parallel interface capabilities. Ensure voltage supply constraints align with the specified 2.375V to 2.625V range. Consider thermal management solutions suitable for the 0°C to 70°C industrial temperature grade. Evaluate PCB layout requirements for the 119-pin PBGA footprint during initial design phases.

Part Context

This part belongs to the 71T75802 family of high-performance synchronous SRAMs. The series offers various speed grades and packaging options to accommodate different system timing and physical space constraints. All variants share the same fundamental ZBT architecture and 1M x 18 organization, differing primarily in clock frequency limits and thermal ratings.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in verified documentation. Consult manufacturer obsolescence notices for potential end-of-life management strategies or approved alternative components within the same product family.

71T75802S150BGG871T75802S150BGG8

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