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Product Detailed Parameters
- Description:IC SRAM 18MBIT PARALLEL 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:18Mbit
- Memory Organization:1M x 18
- Memory Interface:Parallel
- Clock Frequency:166 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:2.375V ~ 2.625V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:3.5 ns
- Grade:-
- Qualification:-
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Overview
The 71T75802S166BGG8 is a synchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics. It features an 18 Mbit storage capacity organized as 1M x 18 bits. The device operates with a maximum clock frequency of 166 MHz and provides a typical access time of 3.5 ns. It utilizes a parallel interface and requires a supply voltage range of 2.375 V to 2.625 V. The component is housed in a 119-pin PBGA package measuring 14x22 mm. It supports single data rate (SDR) operation and includes boundary scan capabilities.
Feature Summary
- Zero Bus Turnaround (ZBT) architecture eliminates dead cycles between read and write operations
- Internally synchronized output buffer enable removes the need for external OE control
- Single R/W control pin simplifies interface logic for fully pipelined applications
- Supports four-word burst capability in either interleaved or linear modes
Applications
- High-performance embedded systems requiring fast data buffering
- Industrial equipment with real-time processing demands
- Network infrastructure components needing low-latency memory access
- Automotive electronics utilizing ZBT SRAM for critical data handling
Procurement Notes
Verify RoHS compliance status, as some listings indicate non-compliance while others specify RoHS3. Confirm moisture sensitivity level (MSL 3) requirements for soldering processes. Check for product discontinuance notifications, as this series has faced end-of-life announcements. Ensure the specific suffix BGG8 matches the required 119-PBGA package variant rather than other available packages like TQFP.
Selection Notes
Select this component when a 18 Mbit synchronous SRAM with 166 MHz performance is required in a BGA form factor. Compare against the 71T75802S200PFI if higher speed (200 MHz) is needed but a TQFP package is acceptable. Consider the 71T75802S166BG8 if lead-free packaging with different reel specifications is preferred. Verify that the 2.5V core and I/O voltage levels match the system design constraints.
Part Context
This part belongs to the Renesas 71T75802 family of Zero Bus Turnaround synchronous SRAMs. The family offers various speed grades and package options, including 133 MHz, 166 MHz, and 200 MHz variants. These devices are designed for high-speed data processing applications where bus turnaround latency must be minimized. The 119-PBGA package provides a compact solution for dense PCB layouts.
Replacement Considerations
Direct substitutes include IDT71T75802S166BG8 and IDT71T75802S166BGG8, which share identical electrical characteristics and pinouts. Other speed grades within the same package, such as 71T75802S133BGG8, may serve as functional alternatives if lower performance is acceptable.
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