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Product Detailed Parameters
- Description:IC SRAM 18MBIT PARALLEL 100TQFP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:18Mbit
- Memory Organization:1M x 18
- Memory Interface:Parallel
- Clock Frequency:166 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:2.375V ~ 2.625V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:3.5 ns
- Grade:-
- Qualification:-
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Overview
The Renesas Electronics Corporation 71T75802S166PFG8 is a 18 Mbit synchronous static random-access memory (SRAM) device organized as 1M x 18. It operates with a maximum clock frequency of 166 MHz and features an access time of 3.5 ns. The component utilizes a parallel interface and requires a core supply voltage of 2.5 V, with a maximum operating current of 275 mA. It is housed in a 119-pin plastic ball grid array (PBGA) package measuring 14x22 mm. The device supports single data rate (SDR) operation and functions within a commercial temperature range of 0°C to +70°C.
Feature Summary
- Zero Bus Turnaround (ZBT) architecture eliminates dead cycles between read and write operations.
- Internally synchronized output buffer enable removes the need for external OE control.
- Single read/write control pin simplifies system design by reducing signal complexity.
- Positive clock-edge triggered registers support fully pipelined applications.
Applications
- High-performance embedded systems requiring fast memory access
- Network infrastructure equipment
- Industrial automation controllers
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels due to potential counterfeit risks. Confirm RoHS compliance status and moisture sensitivity level handling requirements before assembly. Check for official product discontinuation notices or end-of-life notifications from Renesas Electronics to ensure long-term supply stability. Validate that the specific package variant matches the intended PCB footprint and thermal management strategy.
Selection Notes
Select this component when a 18 Mbit capacity with 18-bit data width is required for synchronous parallel interfaces. Ensure the system design accommodates the 2.5V core voltage requirement and the 119-pin PBGA package constraints. Consider the 166 MHz maximum frequency limit against the target application's processing speed. Evaluate the commercial temperature range suitability for the operational environment.
Part Context
This part belongs to the Renesas 71T75802 series of ZBT synchronous SRAMs. It shares architectural similarities with other variants in the family, such as different speed grades or package options like the TQFP-100 version. The series is designed for high-speed data buffering and caching in digital systems.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing designs if considering alternative manufacturers or newer generations from Renesas.
FAQ
What is the bus turnaround characteristic of the 71T75802S166PFG8?
It features Zero Bus Turnaround (ZBT) architecture, which eliminates dead bus cycles when switching between read and write operations.
How is the output buffer controlled in this SRAM?
The output buffer enable is internally synchronized, eliminating the need for external control of the Output Enable (OE) signal.
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