71T75802S200BG

Overview

The Renesas 71T75802S200BG is a 18 Mbit Synchronous Zero Bus Turnaround (ZBT) Static Random Access Memory. It features a 1M x 18 organization with a maximum clock frequency of 200 MHz and an access time of 3.2 ns. The device operates on a 2.5V core voltage, with supply voltage ranging from 2.375 V to 2.625 V. Maximum power consumption is 275 mA. It utilizes a parallel interface and is housed in a 119-pin PBGA package measuring 14x22 mm. The component supports Single Data Rate (SDR) storage type and functions within a commercial temperature range of 0°C to +70°C.

Feature Summary

• Zero Bus Turnaround (ZBT) technology eliminates dead bus cycles during read-write transitions
• Pipelined outputs support high-speed synchronous data transfer at up to 200 MHz
• Integrated burst counter manages sequential memory access operations efficiently

Applications

• High-performance embedded systems requiring fast data buffering
• Network infrastructure equipment needing low-latency memory
• Industrial control systems utilizing synchronous SRAM interfaces

Procurement Notes

Verify current availability status as this component may be subject to limited supply or end-of-life conditions. Confirm package integrity and moisture sensitivity level handling requirements before assembly. Ensure compatibility with existing board designs regarding the 119-pin PBGA footprint and thermal specifications for reliable operation.

Selection Notes

Select this part when a 200 MHz synchronous SRAM with ZBT capabilities is required. The 1M x 18 configuration suits applications needing wide data paths. Verify that the 2.5V I/O logic levels match the system's voltage domain. Consider the PBGA-119 package constraints for PCB layout and thermal management during the design phase.

Part Context

This component belongs to the Renesas 71T75802S series of 2.5V Synchronous ZBT SRAMs. It shares architectural similarities with variants like the 71T75802S166BG and 71T75802S133PFG, differing primarily in speed grade and package type. The series is designed for high-throughput applications where bus turnaround latency must be minimized compared to traditional asynchronous or standard synchronous memories.

Replacement Considerations

Direct substitutes include other speed grades within the same family, such as the 71T75802S166BG, provided the lower clock frequency meets system timing requirements. Cross-reference pinouts and electrical characteristics carefully to ensure functional equivalence without redesigning the host circuit.