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Product Detailed Parameters
- Description:IC SRAM 18MBIT PARALLEL 119PBGA
- Series:-
- Mfr:IDT, Integrated Device Technology Inc
- Package:Bulk
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:18Mbit
- Memory Organization:1M x 18
- Memory Interface:Parallel
- Clock Frequency:200 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:2.375V ~ 2.625V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:3.2 ns
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Overview
The IDT 71T75802S200BG is a synchronous Zero Bus Turnaround (ZBT) SRAM memory integrated circuit manufactured by Integrated Device Technology. It provides an 18 Mbit storage capacity organized as 1 Megabit by 18 bits. The device supports a clock frequency of 200 MHz with a maximum access time of 3.2 ns. It operates on a 2.5V power supply within a range of 2.375V to 2.625V and utilizes a 119-pin PBGA package measuring 14x22 mm.
Feature Summary
- Supports high-performance system speeds with zero bus turnaround technology eliminating dead cycles between write and read operations.
- Features internally synchronized output buffer enable to remove the need for external OE control signals.
- Includes positive clock-edge triggered address, data, and control signal registers for fully pipelined applications.
Applications
- High-speed data buffering in telecommunications equipment
- Cache memory systems in network infrastructure
- Embedded storage in industrial automation controllers
Procurement Notes
Verify component authenticity through authorized Renesas or IDT distributors due to potential obsolescence status. Confirm RoHS compliance and moisture sensitivity level requirements before procurement. Ensure packaging specifications match production line needs. Validate that the specific suffix denotes the correct speed grade and package variant for the intended application design.
Selection Notes
Select this component when designing systems requiring fast synchronous memory with low latency and high bandwidth capabilities. Consider the 1M x 18 organization for wide data path requirements. Evaluate the 119-pin BGA package constraints against PCB layout limitations. Compare performance metrics against alternative ZBT SRAM families if pin compatibility or density variations are required.
Part Context
This part belongs to the IDT 71T75 series of synchronous ZBT SRAMs, designed for high-speed parallel interface applications. The series typically includes variants with different densities and access times, such as the 71T75602. These devices are engineered to replace asynchronous SRAMs in high-performance computing and networking environments where bus turnaround efficiency is critical.
Replacement Considerations
Check for direct substitutes within the 71T75802 family with compatible speed grades. Verify pin-to-pin compatibility with other 119-pin PBGA SRAM packages from IDT or Renesas. Ensure replacement parts maintain the same 2.5V I/O voltage levels and synchronous interface protocols.
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