71T75802S200BGG8

Memory IC Overview

The 71T75802S200BGG8 is a 18Mb (1M x 18) synchronous static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It utilizes Zero Bus Turnaround (ZBT) technology to eliminate dead cycles between read and write operations, supporting a maximum clock frequency of 200 MHz with a 3.2 ns access time. The device operates on a 2.5V core supply voltage within a range of 2.375V to 2.625V and features a 119-pin PBGA package measuring 14x22 mm.

Memory IC Feature Summary

• Zero Bus Turnaround architecture eliminates dead bus cycles during data bus turnaround between reads and writes.
• Internally synchronized output buffer enable removes the requirement for external OE control signals.
• Single R/W control pin simplifies interface logic by combining read and write command functions.
• Positive clock-edge triggered registers for address, data, and control signals enable fully pipelined applications.

Memory IC Applications

• High-performance system speed buffering
• Fully pipelined digital signal processing systems
• Network equipment data routing buffers

Memory IC Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels due to potential availability constraints. Confirm RoHS compliance status as specific variants may not meet current environmental regulations. Validate package integrity and moisture sensitivity level handling procedures prior to assembly to ensure reliability in surface-mount processes.

Memory IC Selection Notes

Select this component for designs requiring high-speed parallel SRAM with minimal latency during bus direction changes. Ensure the host system supports 2.5V I/O levels and provides adequate power delivery for peak current demands. Verify that the PCB layout accommodates the 119-pin BGA footprint and thermal requirements associated with synchronous memory operation at 200 MHz.

Memory IC Part Context

This part belongs to the 71T75802 family of ZBT synchronous SRAMs, designed to replace traditional asynchronous memories in high-throughput applications. The family offers various speed grades and package options, including TQFP and BGA configurations, to suit different density and form factor requirements in industrial and communication infrastructure systems.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternative ZBT SRAM devices from the same manufacturer family with compatible pinouts and electrical specifications if direct replacement is required.