71T75802S200BGGI

Memory IC Overview

The Renesas Electronics Corporation 71T75802S200BGGI is a synchronous static random-access memory (SRAM) integrated circuit belonging to the Zero Bus Turnaround (ZBT) family. It features an 18 Mbit storage capacity organized as 1M x 18 bits with a parallel interface. The device operates at a maximum clock frequency of 200 MHz, providing a data access time of 3.2 ns. It utilizes a 2.5V core voltage supply ranging from 2.375V to 2.625V and is housed in a 119-pin PBGA package measuring 14x22 mm. The component supports surface mount technology and functions within an operating temperature range of -40°C to 85°C.

Memory IC Feature Summary

• Zero Bus Turnaround architecture eliminates dead bus cycles during read-to-write or write-to-read transitions.
• Fully pipelined design with internally synchronized output buffer enable for simplified control logic.
• Supports four-word burst capabilities in either interleaved or linear modes.
• Includes individual byte write control pins for precise data masking.

Memory IC Applications

• High-speed digital signal processing systems
• Network infrastructure equipment requiring low-latency buffering
• Industrial automation controllers
• Telecommunications base stations

Memory IC Procurement Notes

Verify component authenticity through authorized distributors due to obsolete status. Confirm RoHS3 compliance and moisture sensitivity level 3 handling requirements. Check for specific packaging variations such as tape and reel versus tray options. Ensure compatibility with existing board layouts regarding the 119-PBGA footprint and pin configuration before finalizing procurement orders.

Memory IC Selection Notes

Select this model when system designs demand high-frequency operation up to 200 MHz with minimal turnaround latency. Consider the 119-PBGA package for space-constrained applications requiring robust surface mounting. Evaluate power consumption profiles against available cooling solutions given the 2.5V core requirement. Compare alternative ZBT SRAM variants if different organization densities or package types better suit the specific hardware constraints.

Memory IC Part Context

This component is part of the IDT 71T75802 series, originally developed by Integrated Device Technology and now manufactured by Renesas Electronics. The series represents a generation of high-performance synchronous SRAMs designed to bridge speed gaps between processors and slower memory technologies. It serves as a critical caching layer in embedded systems where deterministic access times are essential for real-time performance stability.

Memory IC Replacement Considerations

Publicly confirmed substitute part numbers include 71T75802S166BGGI and 71T75802S100BGI. Verify pinout compatibility and electrical specifications before substitution. Note that lower frequency variants may offer different thermal characteristics but cannot exceed the original 200 MHz limit.