Memory IC 71T75802S200BGGI8 product image

71T75802S200BGGI8

  • Description:IC SRAM 18MBIT PARALLEL 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:1549cc6ac9f6 Category: Brand:

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71T75802S200BGGI8 is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 18MBIT PARALLEL 119PBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for 71T75802S200BGGI8

  • Description:IC SRAM 18MBIT PARALLEL 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:18Mbit
  • Memory Organization:1M x 18
  • Memory Interface:Parallel
  • Clock Frequency:200 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:2.375V ~ 2.625V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:3.2 ns
  • Grade:-
  • Qualification:-

Memory IC datasheet and documents for 71T75802S200BGGI8

71T75802S200BGGI8

Memory IC Overview

The Renesas 71T75802S200BGGI8 is a 18 Mbit synchronous static random access memory (SRAM) organized as 1M x 18. It operates with a clock frequency of 200 MHz and features an access time of 3.2 ns. The device utilizes a parallel interface and requires a supply voltage between 2.375V and 2.625V. It is housed in a 119-pin PBGA package measuring 14x22 mm. The component supports an operating temperature range from -40°C to 85°C.

Memory IC Feature Summary

  • Zero Bus Turnaround (ZBT) architecture eliminates dead cycles between read and write operations.
  • Internally synchronized output buffer enable removes the need for external OE control.
  • Single R/W control pin simplifies interface logic requirements.
  • Supports four-word burst capability in interleaved or linear modes.

Memory IC Applications

  • High-speed data buffering in telecommunications equipment
  • Cache memory in network processing systems
  • Digital signal processing applications requiring low latency

Memory IC Procurement Notes

Verify the specific suffix BGGI8 against the manufacturer datasheet to confirm the exact package dimensions and moisture sensitivity level. Confirm RoHS compliance status, as documentation indicates variations across the product family. Check for obsolescence notices, as this part number has been marked as obsolete in some distributor records. Ensure the source document explicitly lists this full part number to avoid substitution errors.

Memory IC Selection Notes

Select this component when a 200 MHz synchronous SRAM with ZBT technology is required for high-throughput parallel interfaces. The 119-PBGA package is suitable for surface mount applications with space constraints. Consider the 2.5V core voltage requirement for power management design. Verify that the 1M x 18 organization matches the system data bus width requirements.

Memory IC Part Context

This part belongs to the IDT 71T75802 series of synchronous ZBT SRAMs manufactured by Renesas Electronics. The series offers various speed grades and package options, including TQFP and PBGA configurations. The 71T75802S200BGGI8 represents the highest speed grade within the standard 2.5V core voltage family, designed for demanding performance applications.

Memory IC Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. The base product number is 71T75802. Other variants in the series include different speed grades such as 133 MHz or 166 MHz, and alternative packages like 100-TQFP. Verify compatibility with existing PCB footprints if considering package variations.

71T75802S200BGGI871T75802S200BGGI8

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