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Product Detailed Parameters
- Description:IC SRAM 18MBIT PARALLEL 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:18Mbit
- Memory Organization:1M x 18
- Memory Interface:Parallel
- Clock Frequency:200 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:2.375V ~ 2.625V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:3.2 ns
- Grade:-
- Qualification:-
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Overview
The Renesas Electronics Corporation 71T75802S200BGI8 is a synchronous Single Data Rate Zero Bus Turnaround (ZBT) Static Random Access Memory integrated circuit. It provides an 18 Mbit storage capacity organized as 1M x 18 bits. The device operates with a maximum clock frequency of 200 MHz and features a typical access time of 3.2 ns. It requires a supply voltage range of 2.375V to 2.625V. The component is housed in a 119-pin Plastic Ball Grid Array (PBGA) package measuring 14x22 mm. It supports surface mount mounting types and functions within an operating temperature range of -40°C to 85°C.
Feature Summary
- Zero Bus Turnaround architecture eliminates dead cycles during bus turnaround between read and write operations.
- Internally synchronized output buffer enable removes the requirement for external Output Enable control.
- Single Read/Write control pin simplifies interface logic by combining R/W signal handling.
- Boundary scan JTAG interface compliant with IEEE 1149.1 standards for testing and verification.
Applications
- High-performance data communication systems requiring fast memory access
- Industrial equipment real-time engines needing reliable volatile storage
- Embedded systems utilizing parallel SRAM interfaces for pipeline applications
Procurement Notes
Verify part authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS3 compliance status and check for Product Change Notifications regarding packaging or labeling updates. Ensure the specific suffix matches required thermal and electrical specifications. Validate moisture sensitivity level handling procedures before assembly to prevent damage during soldering processes.
Selection Notes
Select this component when system requirements demand high-speed parallel memory with zero wait states. Compare against other ZBT SRAM variants based on clock speed, package type, and temperature range. Ensure voltage compatibility with the 2.5V core and I/O supplies. Consider the 119-PBGA footprint constraints and verify availability given the component's obsolete status in some regions.
Part Context
This device belongs to the 71T75802 family of synchronous ZBT SRAMs manufactured by Renesas Electronics. The family offers various speed grades and package options, including TQFP and PBGA configurations. These memories are designed for applications requiring high throughput without bus turnaround delays. The 71T75802S200BGI8 specifically represents the 200 MHz performance tier in the 119-pin BGA form factor.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. The component is listed as obsolete. Engineers should consult official cross-reference tools or contact the manufacturer directly for qualified replacement options that match the electrical and mechanical specifications.
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