71T75802S200PFG8

Overview

The Renesas Electronics Corporation 71T75802S200PFG8 is a synchronous static random-access memory (SRAM) integrated circuit belonging to the Zero Bus Turnaround (ZBT) family. It features an 18-megabit storage capacity organized as 1M x 18 bits with a parallel interface. The device supports a maximum clock frequency of 200 MHz and achieves a data access time of 3.2 ns. It operates within a supply voltage range of 2.375V to 2.625V and is housed in a 100-pin TQFP package.

Feature Summary

• Zero Bus Turnaround architecture eliminates dead cycles between read and write operations for continuous high-speed throughput.
• Fully pipelined design utilizes positive clock-edge triggered registers for address, data, and control signals.
• Single R/W control pin simplifies interface logic by removing the need for separate output enable controls.
• Supports individual byte write capabilities via dedicated control pins for efficient partial data updates.

Applications

• High-performance embedded systems requiring fast data buffering
• Network infrastructure equipment demanding low-latency packet processing
• Industrial automation controllers needing rapid state retention
• Telecommunications base stations utilizing synchronous data handling

Procurement Notes

Verify the specific suffix PFG8 against official Renesas documentation to confirm tape-and-reel packaging and moisture sensitivity level requirements. Ensure compatibility with existing board layouts for the 100-TQFP footprint. Confirm that the 2.5V core voltage aligns with system power rails. Check for any recent product change notices regarding labeling or material composition updates.

Selection Notes

Select this component when system architecture requires eliminating bus turnaround latency inherent in asynchronous memories. The 200 MHz speed class suits applications needing sub-4ns access times. Consider the 1M x 18 organization for wide-data-path designs. Evaluate thermal performance within the specified operating temperature range during initial design phases.

Part Context

This part belongs to the IDT 71T75802 series, a line of high-density synchronous SRAMs designed for ZBT applications. The series offers various speed grades and package options to accommodate different system timing constraints and physical space limitations while maintaining consistent functional characteristics across the family.

Replacement Considerations

Consult official Renesas documentation for confirmed substitute part numbers. Verify electrical parameters and pinout compatibility before substitution. No alternative part numbers are explicitly confirmed in the provided source material.