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Product Detailed Parameters
- Description:IC SRAM 18MBIT PARALLEL 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:18Mbit
- Memory Organization:1M x 18
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:-
- Voltage - Supply:2.375V ~ 2.625V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:7.5 ns
- Grade:-
- Qualification:-
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Overview
The 71T75902S75BG8 is a synchronous Single Data Rate (SDR) Zero Bus Turnaround (ZBT) Static Random Access Memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 18 Megabits, organized as 1 Megabit by 18 bits. The device supports parallel data interfaces with a maximum clock frequency of 133 MHz and features a typical access time of 7.5 nanoseconds. It operates within a supply voltage range of 2.375V to 2.625V and is housed in a 119-pin Plastic Ball Grid Array (PBGA) package measuring 14x22 mm. The component is rated for commercial operating temperatures between 0°C and 70°C.
Feature Summary
- Supports high-speed synchronous parallel data transfer using Zero Bus Turnaround technology to minimize bus turnaround latency.
- Integrates 18 Megabits of volatile memory organized into 1M x 18 bit configuration for wide data applications.
- Operates on a standard 2.5V core voltage supply to ensure compatibility with common logic families.
Applications
- High-performance embedded systems requiring fast random access memory
- Network infrastructure equipment such as routers and switches
- Industrial control systems with strict timing requirements
Procurement Notes
Verify component authenticity through authorized distributors due to end-of-life status. Confirm RoHS compliance requirements as the part may not meet current environmental standards. Validate package integrity upon receipt, as moisture sensitivity level 3 requires proper handling. Check datasheet revisions for any pinout or electrical specification updates prior to integration.
Selection Notes
Select this component when a 18Mb ZBT SRAM interface is required with 7.5ns access speed. Ensure the design accommodates the 119-PBGA footprint and 2.5V power domain. Consider thermal management for the PBGA package under continuous load. Verify that the system controller supports synchronous parallel protocols compatible with this memory type.
Part Context
This part belongs to the IDT 71T75902 series of synchronous ZBT SRAMs. It shares architectural similarities with other members like the 71T75902S85BGG but offers faster access times. The series is designed for broadband and networking applications. Renesas acquired the IDT memory product line, maintaining these specifications under the Renesas brand.
Replacement Considerations
- 71T75902S85BGG
- IDT71T75902S85BGG
FAQ
What is the specific memory organization of the 71T75902S75BG8?
The memory is organized as 1 Megabit rows by 18 bits per column, totaling 18 Megabits.
Does this component support Zero Bus Turnaround (ZBT)?
Yes, it is a Synchronous SDR ZBT SRAM, allowing for reduced bus turnaround cycles compared to standard synchronous SRAMs.
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