— IC芯片 | 连接器 | 传感器 | 被动器件 —
Product Detailed Parameters
- Description:IC SRAM 18MBIT PARALLEL 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:18Mbit
- Memory Organization:1M x 18
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:-
- Voltage - Supply:2.375V ~ 2.625V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:8.5 ns
- Grade:-
- Qualification:-
Download product information
Overview
The 71T75902S85BGG8 is a 18 Mbit Synchronous Burst SRAM manufactured by Renesas Electronics. It features an organization of 1 Megabit by 18 bits and supports a maximum clock frequency of 100 MHz with an access time of 8.5 ns. The device operates on a 2.5V core voltage, ranging from 2.375V to 2.625V, and utilizes a parallel interface. It is housed in a 119-pin PBGA package measuring 14x22 mm and is rated for commercial temperatures between 0°C and +70°C.
Feature Summary
- Supports synchronous single data rate (SDR) burst operations with ZBT architecture
- Features flow-through architecture for high-speed data throughput
- Includes common I/O configuration for simplified system integration
Applications
- High-performance networking equipment requiring fast memory buffering
- Industrial control systems needing reliable synchronous data storage
- Telecommunications infrastructure utilizing parallel bus interfaces
Procurement Notes
Verify component authenticity through authorized channels as this part may be subject to discontinuation notices. Confirm RoHS compliance status and moisture sensitivity level requirements before procurement. Ensure supply chain stability due to potential limited availability or end-of-life restrictions associated with legacy memory components.
Selection Notes
Select this component when a 1M x 18 bit organization is required for synchronous applications. Ensure the design accommodates the 119-pin BGA footprint and 2.5V power domain. Verify that the 8.5 ns access time meets the system timing constraints compared to faster variants within the same family.
Part Context
This part belongs to the IDT 71T75902 series of synchronous SRAMs, originally developed by Integrated Device Technology before its acquisition by Renesas. It serves as a high-density memory solution for embedded systems requiring non-volatile-like speed without the complexity of flash controllers.
Replacement Considerations
Check for direct pin-compatible substitutes such as the 71T75902S85BG8 or other variants within the 71T75902 family. Verify electrical specifications match exactly, particularly access times and voltage ranges, before substituting.
ChipApex | Global Electronic Components Supplier









