71V016SA10YG

Overview

The Renesas Electronics 71V016SA10YG is a 1 Mbit (64K x 16) asynchronous static random-access memory (SRAM) IC. It operates on a single 3.3V power supply with a voltage range of 3.15V to 3.6V. The device features a maximum access time of 10 ns and supports parallel interface communication. It is housed in a 44-pin SOJ package designed for surface-mount installation. The component functions within a commercial temperature range of 0°C to +70°C and has a maximum supply current of 160 mA.

Feature Summary

• Asynchronous operation without clock or refresh requirements
• Single 3.3V power supply compatibility
• LVTTL-compatible inputs and outputs

Applications

• High-performance processor secondary cache systems
• Industrial control applications requiring fast data access
• Embedded systems utilizing parallel SRAM interfaces

Procurement Notes

Verify the specific suffix 'YG' against official Renesas documentation to confirm the exact package type and lead-free status, as distributor listings may vary. Confirm RoHS compliance and moisture sensitivity level (MSL 3) prior to assembly planning. Check for end-of-life notices or production change notifications that may affect long-term availability.

Selection Notes

Select this component when a 64K x 16 organization is required with a 10 ns access speed. Ensure the design accommodates the 44-lead SOJ footprint and the 3.3V logic levels. Consider thermal management for the specified operating temperature range and verify that the 160 mA peak current draw fits the power budget constraints.

Part Context

This part belongs to the IDT 71V016SA series of CMOS asynchronous SRAMs manufactured by Renesas Electronics. The series provides high-speed memory solutions for various computing and industrial applications. The 71V016SA10 variant specifically denotes the 10 nanosecond access time performance tier within the product family.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.