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71V016SA10YG8
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Product Detailed Parameters
- Description：IC SRAM 1MBIT PARALLEL 44SOJ
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Asynchronous
- Memory Size：1Mbit
- Memory Organization：64K x 16
- Memory Interface：Parallel
- Clock Frequency：-
- Write Cycle Time - Word, Page：10ns
- Voltage - Supply：3.15V ~ 3.6V
- Operating Temperature：0°C ~ 70°C (TA)
- Mounting Type：Surface Mount
- Package / Case：44-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package：44-SOJ
- Access Time：10 ns
- Grade：-
- Qualification：-
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Overview
The Renesas Electronics Corporation 71V016SA10YG8 is a 1 Mbit (64K x 16) asynchronous static random-access memory (SRAM) IC. It operates within a supply voltage range of 3.0 V to 3.6 V and features a maximum access time of 10 ns. The device utilizes a parallel interface and is housed in a 44-lead Small Outline J-Lead (SOJ) package, specifically identified as 44-BSOJ with a width of 0.400 inches (10.16 mm). It supports surface-mount installation and functions reliably across an ambient temperature range of 0°C to +70°C.
Feature Summary
- Asynchronous parallel SRAM architecture providing 1 Mbit storage capacity organized as 64K words by 16 bits.
- High-speed data access capability with a maximum access time of 10 ns for efficient system integration.
- Single power supply operation ranging from 3.0 V to 3.6 V, compatible with standard 3.3 V logic systems.
- Robust industrial-grade thermal performance ensuring stable operation within the 0°C to +70°C temperature range.
Applications
- Data buffering in high-performance computing systems
- Cache memory implementation in embedded controllers
- Industrial automation control units
- Telecommunications equipment signal processing
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and moisture sensitivity level (MSL 3) prior to soldering. Check for End-of-Life notifications or Product Change Notices affecting availability. Ensure proper electrostatic discharge handling during assembly. Validate package dimensions against design specifications.
Selection Notes
Select this component when a 10 ns access speed is required for 64Kx16 asynchronous memory applications. The 44-SOJ package suits designs needing robust lead frames for specific mounting requirements. Consider the 3.3 V operating voltage compatibility with existing logic families. Evaluate thermal management needs for the specified industrial temperature range.
Part Context
This part belongs to the Renesas 71V016SA series of asynchronous SRAMs. It shares architectural similarities with other variants like the 71V016SA15PHG8 but differs in access speed and packaging. The SOJ package variant offers distinct mechanical advantages over TSOP or BGA options for certain board layouts.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify cross-reference compatibility with IDT71V016SA10YG8 if sourcing from legacy inventories. Consult manufacturer guidelines for pin-compatible alternatives if discontinuation occurs.
