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71V016SA12YG8 is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 1MBIT PARALLEL 44SOJ. Review the specifications below when checking this part for your BOM.
The Renesas Electronics 71V016SA12YG8 is a 1 Mbit (64K x 16) asynchronous static random-access memory (SRAM). It operates within a supply voltage range of 3.0 V to 3.6 V, with a maximum power supply current of 150 mA. The device features a parallel interface and offers an access time of 12 ns. It is housed in a 44-pin Small Outline J-Lead (SOJ) package designed for surface-mount technology. The component supports single data rate (SDR) storage and functions reliably across an operating temperature range of 0°C to +70°C.
Verify the specific suffix YG8 against official datasheets to confirm the 44-pin SOJ package and commercial temperature grade. Confirm RoHS compliance status through manufacturer documentation prior to integration. Check for end-of-life notifications or obsolescence notices from Renesas Electronics to ensure long-term supply availability for production planning.
Select this component when a 64K x 16 organization is required with 12 ns access speed in a 44-lead SOJ form factor. Ensure the design environment stays within the 0°C to +70°C operational limit. Compare against other 71V016 variants if different packages like TSOP or BGA are needed, or if extended industrial temperature ratings are necessary for the application.
This part belongs to the IDT/Renesas 71V016 family of high-speed asynchronous SRAMs. These devices are engineered for general-purpose memory applications where fast random access is critical. The 71V016 series typically includes various speed grades and package options to accommodate diverse PCB layout constraints and performance requirements in embedded designs.
Publicly confirmed substitutes include IDT71V016SA12PHG8 and IDT71V016SA12BFG8. Verify pin compatibility and package dimensions before substitution.
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