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Product Detailed Parameters
- Description:IC SRAM 1MBIT PARALLEL 44SOJ
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR),Cut Tape (CT)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Asynchronous
- Memory Size:1Mbit
- Memory Organization:64K x 16
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:12ns
- Voltage - Supply:3V ~ 3.6V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:44-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package:44-SOJ
- Access Time:12 ns
- Grade:-
- Qualification:-
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Overview
The Renesas Electronics 71V016SA12YG8 is a 1 Mbit (64K x 16) asynchronous static random-access memory (SRAM). It operates within a supply voltage range of 3.0 V to 3.6 V, with a maximum power supply current of 150 mA. The device features a parallel interface and offers an access time of 12 ns. It is housed in a 44-pin Small Outline J-Lead (SOJ) package designed for surface-mount technology. The component supports single data rate (SDR) storage and functions reliably across an operating temperature range of 0°C to +70°C.
Feature Summary
- Asynchronous parallel SRAM architecture providing 1 Mbit capacity organized as 64K words by 16 bits
- Surface-mount 44-pin SOJ package configuration optimized for board space efficiency
- Single voltage operation compatible with standard 3.3 V logic systems
Applications
- Embedded system memory expansion requiring non-volatile-like retention during power cycles
- Industrial control units operating within commercial temperature ranges
- Telecommunications equipment buffer storage applications
Procurement Notes
Verify the specific suffix YG8 against official datasheets to confirm the 44-pin SOJ package and commercial temperature grade. Confirm RoHS compliance status through manufacturer documentation prior to integration. Check for end-of-life notifications or obsolescence notices from Renesas Electronics to ensure long-term supply availability for production planning.
Selection Notes
Select this component when a 64K x 16 organization is required with 12 ns access speed in a 44-lead SOJ form factor. Ensure the design environment stays within the 0°C to +70°C operational limit. Compare against other 71V016 variants if different packages like TSOP or BGA are needed, or if extended industrial temperature ratings are necessary for the application.
Part Context
This part belongs to the IDT/Renesas 71V016 family of high-speed asynchronous SRAMs. These devices are engineered for general-purpose memory applications where fast random access is critical. The 71V016 series typically includes various speed grades and package options to accommodate diverse PCB layout constraints and performance requirements in embedded designs.
Replacement Considerations
Publicly confirmed substitutes include IDT71V016SA12PHG8 and IDT71V016SA12BFG8. Verify pin compatibility and package dimensions before substitution.
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