71V016SA12YGI8

Description：IC SRAM 1MBIT PARALLEL 44SOJ
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)

SKU:d92a075ff06a Category: Memory IC Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：IC SRAM 1MBIT PARALLEL 44SOJ
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR)
Memory Type：Volatile
Memory Format：SRAM
Technology：SRAM - Asynchronous
Memory Size：1Mbit
Memory Organization：64K x 16
Memory Interface：Parallel
Clock Frequency：-
Write Cycle Time - Word, Page：12ns
Voltage - Supply：3V ~ 3.6V
Operating Temperature：-40°C ~ 85°C (TA)
Mounting Type：Surface Mount
Package / Case：44-BSOJ (0.400", 10.16mm Width)
Supplier Device Package：44-SOJ
Access Time：12 ns
Grade：-
Qualification：-

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71V016SA12YGI8

Overview

The Renesas Electronics Corporation 71V016SA12YGI8 is a static random-access memory (SRAM) integrated circuit. It provides a storage capacity of 1 Mbit, organized as 64K words by 16 bits. The device operates with an asynchronous parallel interface and features a maximum access time of 12 ns. It functions within a supply voltage range of 3 V to 3.6 V, with a maximum power consumption current of 150 mA. The component is designed for surface-mount installation in a 44-pin SOJ package. It supports single data rate (SDR) operations and is rated for commercial operating temperatures between 0°C and +70°C.

Feature Summary

Asynchronous parallel interface for direct system integration
High-speed 12 ns access time for rapid data retrieval
Single data rate operation supporting standard SRAM protocols

Applications

Embedded systems requiring fast local data buffering
Industrial control units needing volatile memory storage
Consumer electronics utilizing 3.3V logic levels

Procurement Notes

Verify the specific suffix YGI8 against official datasheets to confirm the SOJ-44 package and lead-free status. Confirm RoHS compliance details directly from manufacturer documentation. Check for end-of-life notices or production change notifications prior to procurement. Ensure availability aligns with project timelines due to potential discontinuation risks associated with older memory families.

Selection Notes

Select this component when a 64Kx16 organization is required with 12 ns speed performance. Ensure the design accommodates the 44-pin SOJ footprint and 3.3V power domain. Consider humidity sensitivity handling during assembly if moisture barrier packaging was compromised. Verify that the 150 mA maximum current draw fits within the system's power budget constraints.

Part Context

This part belongs to the 71V016SA series of asynchronous SRAMs manufactured by Renesas Electronics. It shares architectural similarities with other variants in the family, differing primarily in access speed, package type, and temperature rating. The 71V016SA line is designed for general-purpose memory applications requiring reliable volatile storage without complex refresh cycles.