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Product Detailed Parameters
- Description:IC SRAM 1MBIT PARALLEL 48CABGA
- Series:-
- Mfr:IDT, Integrated Device Technology Inc
- Package:Bulk
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Asynchronous
- Memory Size:1Mbit
- Memory Organization:64K x 16
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:20ns
- Voltage - Supply:3V ~ 3.6V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:48-LFBGA
- Supplier Device Package:48-CABGA (7x7)
- Access Time:20 ns
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Overview
The IDT 71V016SA20BFG is a high-speed Static RAM with a total memory density of 1,048,576 bits. It is organized as 64K words by 16 bits and features a maximum access time of 20 ns. The device operates on a single 3.3 V power supply, with voltage ranges from 3.0 V to 3.6 V. It utilizes asynchronous parallel interface technology and is housed in a 48-pin CABGA (7x7 mm) package.
Feature Summary
- High-speed asynchronous SRAM architecture for rapid data retrieval
- CMOS fabrication ensuring high reliability and low power consumption
- Single 3.3 V operation compatible with standard logic levels
Applications
- High-performance computing systems requiring fast cache memory
- Industrial control equipment needing reliable volatile storage
- Telecommunications infrastructure utilizing parallel data interfaces
Procurement Notes
Verify the specific suffix BFG confirms the 48-CABGA package and 20 ns speed grade. Confirm RoHS compliance status if required for your manufacturing process. Check current availability as this component may be subject to discontinuation notices or limited stock from original manufacturers like Renesas Electronics.
Selection Notes
Select this part when a 1 Mbit capacity with 16-bit word width is required. Ensure the design supports asynchronous timing with a 20 ns maximum access constraint. Verify that the PCB layout accommodates the 48-ball CABGA footprint and that the system provides a stable 3.3 V supply within the specified operating temperature range.
Part Context
This component belongs to the IDT71V016 series of high-speed SRAMs. The series is characterized by its use of high-performance CMOS technology. These devices are designed for applications demanding fast random access times and are widely used in embedded systems where non-volatile storage is not suitable for frequent write cycles.
Replacement Considerations
Check for direct pin-compatible replacements within the same family, such as variants with different access speeds or packaging options. Verify if newer generations from Renasas offer equivalent specifications with improved availability.
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