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Product Detailed Parameters
- Description:IC SRAM 1MBIT PARALLEL 44TSOP II
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tube
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Asynchronous
- Memory Size:1Mbit
- Memory Organization:64K x 16
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:20ns
- Voltage - Supply:3V ~ 3.6V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:44-TSOP (0.400", 10.16mm Width)
- Supplier Device Package:44-TSOP II
- Access Time:20 ns
- Grade:-
- Qualification:-
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Overview
The Renesas Electronics 71V016SA20PHGI is a 1 Mbit (64K x 16) asynchronous static random-access memory (SRAM) device. It operates within a supply voltage range of 3.0 V to 3.6 V and features a maximum access time of 20 ns. The component utilizes a parallel interface and is housed in a 44-pin Thin Shrink Small Outline Package (TSOP II). It supports an operating temperature range from -40°C to +85°C, with a maximum power supply current of 120 mA.
Feature Summary
- Asynchronous operation requiring no external clock signals or periodic refresh cycles for data retention.
- Single 3.3 V power supply compatibility with TTL-compatible bidirectional data inputs and outputs.
- Low power consumption achieved through chip deselect functionality during inactive states.
Applications
- Industrial equipment requiring fast real-time data buffering.
- Embedded systems utilizing microcontrollers needing high-speed volatile memory expansion.
- Consumer electronics devices requiring compact surface-mount memory solutions.
Procurement Notes
Verify the specific suffix PHGI confirms the TSOP II package and lead-free status. Confirm RoHS compliance requirements against project specifications. Check for end-of-life notices as some variants in this series have been discontinued. Ensure moisture sensitivity level handling procedures are followed during assembly.
Selection Notes
Select this part when a 64K by 16 organization is required with 20 ns speed at 3.3 V. Compare against other 71V016SA variants if different access times or packages are needed. Consider alternative manufacturers only if this specific Renesas component is unavailable or obsolete.
Part Context
This component belongs to the IDT/Renesas 71V016SA family of high-performance CMOS SRAMs. These devices are designed for applications demanding reliable, non-volatile-free storage with fast read/write capabilities. The family includes various speed grades and package options to suit different design constraints.
Replacement Considerations
The AS7C31026B-12JIN from Alliance Memory is listed as a similar replacement option for discontinued units.
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