71V016SA20YG

Overview

The Renesas Electronics Corporation 71V016SA20YG is a 1 Mbit (64K x 16) asynchronous static random-access memory (SRAM) IC. It operates on a single 3.0 V to 3.6 V power supply and features a parallel interface with a maximum access time of 20 ns. The device is housed in a 44-pin Small Outline J-Lead (SOJ) package, measuring 0.400 inches (10.16 mm) wide. It supports surface-mount installation and functions within an industrial temperature range of -40°C to +85°C.

Feature Summary

• Asynchronous operation without requiring external clocks or refresh cycles
• Low standby current consumption for extended battery life
• LVTTL-compatible inputs and outputs
• Single 3.3 V power supply operation

Applications

• High-performance processor secondary cache systems
• Industrial equipment requiring extended temperature stability
• Battery-powered devices needing low standby power

Procurement Notes

Verify the specific suffix 'YG' corresponds to the 44-SOJ package and industrial temperature grade (-40°C to +85°C). Confirm RoHS compliance status and moisture sensitivity level (MSL 3) requirements during storage and handling. Check for obsolescence notices as this component may be discontinued.

Selection Notes

Select this part when a 64K x 16 organization is required with 20 ns speed in an SOJ footprint. Ensure the design accommodates LVTTL logic levels and a 3.3 V supply. Compare against TSOP variants if lead-free surface mount is preferred over J-leads.

Part Context

This component belongs to the 71V016SA series of high-speed CMOS asynchronous SRAMs. It shares architectural similarities with other members like the 71V016SA20PHG but differs in package type and operating temperature range. The series is designed for applications demanding fast random access without complex control logic.

Replacement Considerations

Alliance Memory AS7C31026B-12JIN is listed as a similar replacement option.