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71V016SA20YG8
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Product Detailed Parameters
- Description：IC SRAM 1MBIT PARALLEL 44SOJ
- Series：-
- Mfr：Renesas Electronics Corporation
- Package：Tape & Reel (TR)
- Memory Type：Volatile
- Memory Format：SRAM
- Technology：SRAM - Asynchronous
- Memory Size：1Mbit
- Memory Organization：64K x 16
- Memory Interface：Parallel
- Clock Frequency：-
- Write Cycle Time - Word, Page：20ns
- Voltage - Supply：3V ~ 3.6V
- Operating Temperature：0°C ~ 70°C (TA)
- Mounting Type：Surface Mount
- Package / Case：44-BSOJ (0.400", 10.16mm Width)
- Supplier Device Package：44-SOJ
- Access Time：20 ns
- Grade：-
- Qualification：-
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Overview
The 71V016SA20YG8 is a 1 Mbit (64K x 16) asynchronous static random-access memory (SRAM) manufactured by Renesas Electronics. It operates within a supply voltage range of 3.0 V to 3.6 V and features a maximum access time of 20 ns. The device utilizes a parallel interface and is housed in a 44-pin SOJ package. It supports surface-mount installation and functions within an industrial temperature range of -40°C to +85°C.
Feature Summary
- Asynchronous operation with parallel data interface
- Industrial-grade wide operating temperature range
- Single power supply voltage compatibility
Applications
- Industrial control systems requiring reliable volatile storage
- Embedded applications with strict thermal constraints
- Data buffering in high-reliability electronic equipment
Procurement Notes
Verify component authenticity through authorized distributors or official Renesas channels. Confirm the specific suffix 'YG8' matches the required 44-SOJ package and industrial temperature rating. Check for recent Product Change Notifications regarding manufacturing site transfers or labeling updates. Ensure compliance with RoHS3 standards as indicated in public documentation.
Selection Notes
Select this part when a 64K x 16 organization is required with 20 ns speed performance. The 44-SOJ package is suitable for applications needing robust surface-mount connectivity. Consider the -40°C to +85°C range for environments exceeding commercial limits. Verify that the 3.3V nominal supply aligns with the system's power architecture.
Part Context
This component belongs to the IDT/Renesas 71V016 series of high-speed SRAMs. It serves as a direct replacement for legacy IDT-branded parts, maintaining functional compatibility while adhering to current Renesas manufacturing standards. The series is designed for general-purpose memory applications where fast random access is critical.
Replacement Considerations
Publicly confirmed substitute part numbers include AS7C31026B-12JIN from Alliance Memory, Inc. Verify pinout and timing compatibility before substitution.
