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Product Detailed Parameters
- Description:IC SRAM 1MBIT PARALLEL 32TSOP II
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tube
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Asynchronous
- Memory Size:1Mbit
- Memory Organization:128K x 8
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:12ns
- Voltage - Supply:3V ~ 3.6V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:32-SOIC (0.400", 10.16mm Width)
- Supplier Device Package:32-TSOP II
- Access Time:12 ns
- Grade:-
- Qualification:-
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Overview
The 71V124SA12PHG is a 3.3V CMOS static random-access memory (SRAM) organized as 128K x 8 bits, providing a total capacity of 1 megabit. It features asynchronous parallel interface with a maximum access time of 12 nanoseconds. The device operates on a single 3.3V supply voltage ranging from 3.0V to 3.6V and supports an industrial temperature range of 0°C to 70°C. It is housed in a 32-pin TSOP II surface-mount package.
Feature Summary
- Utilizes JEDEC center power and ground pinout configuration to reduce noise generation and improve system performance.
- Employs fully static asynchronous circuitry that eliminates the need for external clocks or periodic refresh cycles.
- Features LVTTL-compatible bidirectional inputs and outputs for direct interfacing with standard logic families.
Applications
- High-speed data buffering in embedded systems
- Cache memory implementation in microcontroller-based designs
- Real-time processing applications requiring fast random access
Procurement Notes
Verify component authenticity through authorized Renesas distributors. Confirm package integrity and moisture sensitivity level handling procedures prior to assembly. Ensure supply chain documentation matches the specific suffix PHG for the TSOP II variant. Check for end-of-life status updates as discontinuation notices may affect long-term availability.
Selection Notes
Select this component when a compact 1Mb SRAM solution with 12ns speed is required for 3.3V logic systems. The TSOP II package suits space-constrained printed circuit board layouts. Consider the center power/ground pinout advantage for signal integrity in noisy environments compared to standard peripheral pin configurations.
Part Context
This part belongs to the 71V124 series of high-performance asynchronous SRAMs manufactured by Renesas Electronics. The series is designed for applications demanding reliable, low-power static memory storage without the complexity of synchronous control signals. It represents a standard solution for general-purpose volatile memory needs in industrial and consumer electronics.
Replacement Considerations
The 71V124SA12YG is a documented alternative within the same family offering identical electrical specifications but utilizing a different SOJ package format. Verify pin compatibility and mechanical footprint differences before substitution.
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