71V124SA12YG

Description：IC SRAM 1MBIT PARALLEL 32SOJ
Series：-
Mfr：Renesas Electronics Corporation
Package：Tube

SKU:ebe1400a74d2 Category: Memory IC Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：IC SRAM 1MBIT PARALLEL 32SOJ
Series：-
Mfr：Renesas Electronics Corporation
Package：Tube
Memory Type：Volatile
Memory Format：SRAM
Technology：SRAM - Asynchronous
Memory Size：1Mbit
Memory Organization：128K x 8
Memory Interface：Parallel
Clock Frequency：-
Write Cycle Time - Word, Page：12ns
Voltage - Supply：3V ~ 3.6V
Operating Temperature：0°C ~ 70°C (TA)
Mounting Type：Surface Mount
Package / Case：32-BSOJ (0.400", 10.16mm Width)
Supplier Device Package：32-SOJ
Access Time：12 ns
Grade：-
Qualification：-

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71V124SA12YG

Overview

The 71V124SA12YG is a 3.3V asynchronous static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It features a storage capacity of 1 Mbit, organized as 128K words by 8 bits. The device offers a maximum access time of 12 ns and operates within a supply voltage range of 3 V to 3.6 V. It utilizes a parallel interface and is housed in a 32-pin SOJ surface-mount package. The component supports an industrial operating temperature range from -40°C to +85°C.

Feature Summary

Utilizes JEDEC center power and ground pinout architecture to reduce noise generation and improve system performance.
Employs fully static asynchronous circuitry that eliminates the need for external clocks or periodic refresh cycles.
Features LVTTL-compatible bidirectional inputs and outputs for direct interfacing with standard logic families.

Applications

High-speed data buffering in embedded systems
Cache memory implementation in microcontroller-based designs
Real-time processing units requiring low-latency data access

Procurement Notes

Verify component authenticity through authorized distributors due to end-of-life status. Confirm package integrity and moisture sensitivity level handling procedures during assembly. Cross-reference datasheet revisions to ensure compatibility with existing design specifications before integration into new production runs.

Selection Notes

Select this component when a 1 Mbit parallel SRAM with 12 ns speed is required in a 3.3V environment. Ensure the design accommodates the 36-SOJ footprint and thermal characteristics. Consider alternative packages if space constraints differ from the specified dimensions.

Part Context

This part belongs to the 71V124 series of high-performance CMOS static RAMs. It is designed for applications demanding fast read/write operations without complex control logic. The series supports single-supply operation, simplifying power distribution in portable and battery-operated electronic devices.