71V124SA15TYG8

$2.66

Description：IC SRAM 1MBIT PARALLEL 32SOJ
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:7b340d787a24 Category: Memory IC Brand: Renesas Electronics Corporation

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Product introduction

Product Detailed Parameters

Description：IC SRAM 1MBIT PARALLEL 32SOJ
Series：-
Mfr：Renesas Electronics Corporation
Package：Tape & Reel (TR),Cut Tape (CT)
Memory Type：Volatile
Memory Format：SRAM
Technology：SRAM - Asynchronous
Memory Size：1Mbit
Memory Organization：128K x 8
Memory Interface：Parallel
Clock Frequency：-
Write Cycle Time - Word, Page：15ns
Voltage - Supply：3V ~ 3.6V
Operating Temperature：0°C ~ 70°C (TA)
Mounting Type：Surface Mount
Package / Case：32-BSOJ (0.300", 7.62mm Width)
Supplier Device Package：32-SOJ
Access Time：15 ns
Grade：-
Qualification：-

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71V124SA15TYG8

Overview

The 71V124SA15TYG8 is a 1 Mbit (128K x 8) asynchronous static random-access memory manufactured by Renesas Electronics. It operates on a single 3.3V supply with a voltage range of 3.0V to 3.6V. The device features a 15 ns access time and utilizes a parallel interface. It is housed in a 32-pin Small Outline J-Lead (SOJ) package designed for surface-mount technology.

Feature Summary

Utilizes JEDEC center power and ground pinout architecture to reduce noise generation and improve system performance.
Employs fully static asynchronous circuitry that requires no clocks or refresh cycles for operation.
Features LVTTL-compatible bidirectional inputs and outputs for direct interfacing with logic systems.

Applications

General-purpose data storage in embedded systems
Cache memory applications in microprocessor designs
Buffering in high-speed digital signal processing circuits

Procurement Notes

Verify component authenticity through authorized channels as this part may be subject to obsolescence notices. Confirm specific suffix designations against official datasheets to ensure correct voltage and package variants. Check for moisture sensitivity levels and handling requirements prior to assembly. Validate RoHS compliance status based on the manufacturing date code and current regulatory updates.

Selection Notes

Select this component when a 3.3V asynchronous SRAM with 15 ns speed is required in a 32-SOJ package. Ensure the design supports LVTTL logic levels for I/O compatibility. Consider the center power/ground pinout benefits for noise reduction in sensitive analog-digital mixed environments. Verify thermal management capabilities within the specified operating temperature range.

Part Context

This device belongs to the 71V124 series of CMOS SRAMs, which are organized as 128K words by 8 bits. The series is characterized by low power consumption and high-speed operation suitable for battery-powered and portable applications. The 71V124SA variant specifically denotes the 3.3V version with SOJ packaging options.