71V124SA15YG

Overview

The 71V124SA15YG is a 3.3V asynchronous static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It features a storage organization of 128K x 8 bits, providing a total capacity of 1 Megabit. The device supports a maximum access time of 15 nanoseconds and operates within a supply voltage range of 3.0V to 3.6V. It utilizes a parallel interface and is housed in a surface-mountable 32-pin Small Outline J-Lead (SOJ) package.

Feature Summary

• Asynchronous operation without the need for external clocks or refresh cycles
• JEDEC center power and ground pinout configuration to reduce noise generation
• LVTTL-compatible bidirectional inputs and outputs for system integration

Applications

• General-purpose data buffering in embedded systems
• Cache memory implementation in microcontroller-based designs
• Industrial control system data storage

Procurement Notes

Verify component authenticity through authorized distributors due to end-of-life status. Confirm RoHS compliance details as specifications may vary by manufacturing date. Check for moisture sensitivity level requirements during handling and storage to ensure device reliability before assembly.

Selection Notes

Select this component when a 128K x 8 asynchronous SRAM with 15ns speed is required. Ensure the design accommodates the 3.3V logic levels and SOJ-32 footprint. Consider alternative packages if higher density or different form factors are needed for the specific application constraints.

Part Context

This part belongs to the 71V124 series of high-speed CMOS static RAMs. It is designed for applications requiring fast, non-volatile-like performance without the complexity of synchronous interfaces. The series is characterized by low power consumption and compatibility with standard logic families.

Replacement Considerations

Public confirmed substitute part numbers: IDT71V124SA15TYI.