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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PAR 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:133 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:4.2 ns
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Overview
The Renesas Electronics Corporation 71V2546S133BGI is a synchronous single data rate (SDR) zero bus turnaround (ZBT) static random-access memory (SRAM). It features a storage capacity of 4.5 Mbit organized as 128K x 36. The device operates with a core voltage range of 3.135V to 3.465V and supports 2.5V I/O levels. It achieves a maximum clock frequency of 133 MHz with an access time of 4.2 ns. The component is housed in a 119-pin PBGA package measuring 14x22 mm and functions within a temperature range of -40°C to +85°C.
Feature Summary
- Zero Bus Turnaround (ZBT) architecture eliminates dead cycles during read-to-write or write-to-read transitions.
- Synchronous Single Data Rate (SDR) interface utilizes a single clock edge for data transfer.
- Pipelined output structure ensures high-speed data throughput.
- Supports 2.5V I/O levels while maintaining a 3.3V core voltage operation.
Applications
- High-performance networking equipment requiring low-latency buffering
- Industrial control systems demanding fast real-time data processing
- Telecommunications infrastructure utilizing parallel SRAM interfaces
Procurement Notes
This component has reached the end-of-life status, with discontinuance notifications issued by the manufacturer. Availability is restricted, and sourcing may be limited to existing stock or third-party distributors. Verify RoHS compliance status carefully, as this specific part number does not meet current environmental standards. Confirm lead-free status and moisture sensitivity level requirements before procurement planning.
Selection Notes
Select this component only if a 128K x 36 organization and 133 MHz synchronous performance are strictly required. Ensure the design accommodates the 119-pin PBGA footprint and 3.3V core voltage supply. Consider that the device uses 2.5V I/O levels, necessitating appropriate voltage translation if interfacing with 3.3V logic systems. Evaluate alternative ZBT SRAM options if end-of-life constraints impact long-term production viability.
Part Context
The 71V2546S133BGI belongs to the IDT/Renesas 71V2546 series of high-speed synchronous SRAMs. This family is designed for applications requiring wide data buses and high bandwidth. The part represents a specific speed grade and package variant within the broader 71V2546 product line, offering pipelined architecture for efficient data handling in parallel memory systems.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the end-of-life status, direct pin-compatible replacements from the same manufacturer should be verified through official Renesas Electronics obsolescence notices or technical support channels.
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