71V2546S133PFG

Overview

The 71V2546S133PFG is a synchronous static random-access memory (SRAM) device manufactured by Renesas Electronics. It features a storage capacity of 4 Mbit organized as 128 k x 36 bits. The component supports a maximum clock frequency of 150 MHz and offers an access time of 3.8 ns. It operates with a parallel interface and utilizes a single 3.3 V power supply, while the I/O voltage range is specified between 2.5 V and 3.3 V. The device is housed in a PBGA-119 package and functions within a temperature range of -40°C to +85°C.

Feature Summary

• Zero Bus Turnaround (ZBT) technology eliminates dead bus cycles during read/write transitions.
• Synchronous Single Data Rate (SDR) architecture for high-speed data transfer.
• Integrated address and control signal registers to pipeline operations.

Applications

• High-performance processor secondary cache systems
• Network infrastructure equipment requiring low-latency memory
• Industrial control systems operating in extended temperature ranges

Procurement Notes

Verify current availability status as discontinuation notices may apply. Confirm RoHS compliance requirements against specific project standards, as some variants may not meet current regulations. Ensure proper handling procedures are followed due to moisture sensitivity classification. Validate pin compatibility with existing PCB layouts before integration.

Selection Notes

Select this component when ZBT performance is required for 36-bit wide data paths. Compare access times and clock frequencies against alternative SRAM families for system timing alignment. Consider the PBGA-119 package constraints for thermal management and board space. Verify that the 3.3V core voltage aligns with the target system power architecture.

Part Context

This part belongs to the 71V2546 series of synchronous SRAMs designed for high-throughput applications. It shares architectural similarities with other ZBT devices but is distinct in its 128k x 36 organization. The series is engineered to replace asynchronous memories in high-speed digital designs where bus turnaround latency is critical.

Replacement Considerations

Check for direct pin-compatible upgrades within the same Renesas ZBT family. Evaluate alternative manufacturers offering similar 128k x 36 synchronous SRAMs with comparable access speeds. Ensure any substitute maintains the same package footprint and voltage specifications.