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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PAR 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:150 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:3.8 ns
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Overview
The Renesas Electronics Corporation 71V2546S150BG is a synchronous single data rate zero bus turnaround static random access memory integrated circuit. It features a storage capacity of 4.5 megabits organized as 128 kilowords by 36 bits. The device supports a maximum clock frequency of 150 MHz with an access time of 3.8 nanoseconds. It operates within a supply voltage range of 3.135 volts to 3.465 volts and functions at temperatures between 0°C and 70°C. The component is housed in a 119-pin plastic ball grid array package measuring 14 by 22 millimeters.
Feature Summary
- Supports parallel interface for high-speed data transfer
- Eliminates dead bus cycles during read-to-write or write-to-read transitions
- Designed for surface mount installation
Applications
- High-performance embedded systems requiring fast memory access
- Network infrastructure equipment
- Industrial control systems
Procurement Notes
Verify the exact suffix designation, as official documentation lists the 150MHz speed grade typically with a BG8 suffix (71V2546S150BG8). Confirm RoHS compliance status, as this series is often marked non-compliant. Check current lifecycle status, as these components are frequently subject to discontinuation notices. Ensure the specific package dimensions match the 119-PBGA form factor required for your design.
Selection Notes
Select this component when a 36-bit wide data path is required for system architecture compatibility. The 150 MHz speed grade provides sufficient throughput for demanding real-time applications. Verify that the 3.3V core voltage aligns with the target system power rails. Consider the 119-ball BGA footprint constraints and thermal dissipation requirements during the layout phase.
Part Context
This part belongs to the 71V2546S family of synchronous SRAMs from Renesas. These devices are engineered to provide high-density memory solutions with low latency. The family includes various speed grades and package options to accommodate different performance and physical space requirements in electronic designs.
Replacement Considerations
Official substitutes include the 71V2546S150BG8 variant, which shares identical electrical specifications but may differ in packaging quantity. Cross-reference pinouts and timing parameters carefully before integration.
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