71V2556S133PFG

Memory IC Overview

The IDT71V2556S133PFG is a 4.5 Mbit synchronous static random access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It utilizes Zero Bus Turnaround (ZBT) technology to eliminate dead cycles between read and write operations. The device features a parallel interface with a maximum clock frequency of 133 MHz and an access time of 4.2 ns. It operates on a 3.3 V power supply within the range of 3.135 V to 3.465 V and supports 2.5 V I/O levels. The memory is organized as 128K x 36 bits and is housed in a 100-pin TQFP package.

Memory IC Feature Summary

• Zero Bus Turnaround (ZBT) architecture eliminates bus turnaround dead cycles between read and write transitions.
• Fully pipelined synchronous operation with internally synchronized output buffer enable.
• Supports four-word burst capabilities for interleaved or linear data transfer.
• Includes individual byte write control pins for selective data masking.

Memory IC Applications

• High-performance processor secondary cache systems
• Network routing and switching equipment buffers
• Telecommunications base station signal processing
• Industrial automation control logic storage

Memory IC Procurement Notes

Verify component authenticity through authorized distributors due to potential obsolescence. Confirm moisture sensitivity level (MSL 3) handling requirements during assembly. Ensure voltage compatibility with 3.3 V core and 2.5 V I/O supplies. Check for updated datasheets regarding pinout consistency across manufacturing batches.

Memory IC Selection Notes

Select this component for applications requiring high-speed synchronous data buffering without pipeline stalls. Compare against asynchronous alternatives if clock distribution is constrained. Verify thermal performance within the commercial temperature range of 0°C to 70°C. Ensure board layout accommodates the 100-TQFP footprint and 36-bit data width constraints.

Memory IC Part Context

This part belongs to the 71V2556 series of ZBT synchronous SRAMs, designed for high-throughput data handling. It replaces older asynchronous SRAMs in high-speed digital designs. The manufacturer integrates ZBT logic to maintain bus efficiency during bidirectional data transfers, distinguishing it from standard synchronous SRAMs that require wait states for direction changes.

Memory IC Replacement Considerations

Public confirmed substitute part numbers: 71V2556SA133BGG, 71V2556S133PFG8.