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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PAR 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:133 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:4.2 ns
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Overview
The 71V2556SA133BGG8 is a 4.5 Mbit synchronous static random-access memory (SRAM) component manufactured by Renesas Electronics Corporation. It features a parallel interface with an organization of 128K x 36 bits and operates at a clock frequency of 133 MHz. The device utilizes Zero Bus Turnaround (ZBT) technology to eliminate dead cycles between read and write operations. It requires a core supply voltage range of 3.135V to 3.465V and supports 2.5V I/O levels. The component is housed in a 119-pin plastic ball grid array (PBGA) package measuring 14x22 mm, with an access time of 4.2 ns.
Feature Summary
- Zero Bus Turnaround (ZBT) architecture eliminates bus turnaround dead cycles between read and write transitions.
- Internally synchronized output buffer enable removes the requirement for external OE control signals.
- Positive clock-edge triggered registers for address, data, and control signals support fully pipelined applications.
- Four-word burst capability allows interleaved or linear data transfer modes.
Applications
- High-performance embedded systems requiring fast data buffering
- Network infrastructure equipment utilizing pipeline processing
- Industrial automation controllers needing rapid memory access
Procurement Notes
Verify component authenticity through authorized channels as this part may be subject to discontinuance notices. Confirm package integrity upon receipt due to moisture sensitivity level 3 requirements. Ensure proper handling procedures are followed to prevent electrostatic discharge damage during installation. Cross-reference ordering suffixes carefully to match specific speed grades and temperature ranges.
Selection Notes
Select this component when zero bus turnaround latency is critical for system throughput. Ensure the design accommodates the 119-pin PBGA footprint and thermal dissipation requirements. Verify that the host controller supports the required 133 MHz clock frequency and ZBT protocol. Confirm compatibility with 3.3V core and 2.5V I/O power domains before integration.
Part Context
This SRAM belongs to the 71V2556 family of high-speed synchronous memories designed for demanding digital signal processing tasks. The series offers various speed grades and package options to suit different form factors. The SA133 variant specifically targets applications requiring 133 MHz operation within the commercial temperature range.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult manufacturer obsolescence notices for potential end-of-life management strategies.
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