71V256S12YG

Memory IC Overview

The 71V256S12YG is a 3.3V CMOS asynchronous static random-access memory (SRAM) manufactured by Renesas Electronics. It features a storage capacity of 4 Mbit organized as 256K x 8 bits. The device offers a maximum access time of 12 ns and operates within a supply voltage range of 3.0 V to 3.6 V. It utilizes a parallel interface and is housed in a 44-lead SOJ package suitable for surface-mount installation. The component supports an industrial temperature range from -40°C to +85°C and has a maximum power consumption of 180 mA.

Memory IC Feature Summary

• Fully static asynchronous circuitry requiring no clocks or refresh cycles
• Low standby current characteristics designed to extend battery life
• LVTTL-compatible inputs and outputs for direct logic interfacing

Memory IC Applications

• High-performance processor secondary cache systems
• Industrial control applications requiring wide temperature tolerance
• Battery-powered devices utilizing low-power standby modes

Memory IC Procurement Notes

Verify the specific suffix YG against official Renesas documentation to confirm package type and temperature grade, as variations exist within the series. Confirm end-of-life status and availability through authorized distributors, as this component may be discontinued. Ensure moisture sensitivity level handling procedures are followed during assembly to prevent damage.

Memory IC Selection Notes

Select this part when a 256K x 8 organization with 12 ns speed is required in a 44-lead SOJ package. Compare against other 71V256 variants if different pinouts or commercial temperature ranges suffice. Verify that the 3.3V supply and LVTTL compatibility match the system design constraints before finalizing the component choice.

Memory IC Part Context

This component belongs to the 71V256SA family of 3.3V asynchronous SRAMs. It shares architectural similarities with other members like the 71V256SA12PZG but differs in package configuration and potentially temperature rating. The series is characterized by low power consumption and high-speed operation suitable for embedded memory applications.

Memory IC Replacement Considerations

Check for IDT71V256S12YG as a potential equivalent under the Integrated Device Technology branding prior to acquisition by Renesas. Verify pinout compatibility and electrical specifications against any alternative 256Kx8 SRAMs before substitution.