— IC芯片 | 连接器 | 传感器 | 被动器件 —
Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PAR 100TQFP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:166 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x20)
- Access Time:3.5 ns
Download product information
Overview
The 71V25761S166PFG is a 4.5 Mbit Synchronous Single Data Rate (SDR) Static Random Access Memory (SRAM) manufactured by Renesas Electronics Corporation. It features a memory organization of 128K x 36 bits and utilizes a parallel interface. The device supports a maximum clock frequency of 166 MHz with an access time of 5 ns. It operates within a supply voltage range of 3.135 V to 3.465 V and has a maximum power current of 330 mA. The component is housed in a 165-CABGA (13x15) surface-mount package and is rated for an operating temperature range of -40°C to +85°C.
Feature Summary
- Supports synchronous burst read/write operations with pipelined architecture
- Includes dedicated write, data, address, and control registers
- Designed for high-speed parallel data transfer applications
Applications
- High-performance computing systems requiring fast memory access
- Network infrastructure equipment
- Industrial automation controllers
Procurement Notes
Verify the obsolete status of this specific part number before procurement planning. Confirm availability of substitute components such as the 71V25761S166PFGI if production continuity is required. Ensure that the selected replacement matches the 165-CABGA package dimensions and pinout configuration to maintain board compatibility without redesign.
Selection Notes
Select this component for designs requiring 36-bit wide data paths at high clock speeds. Consider the 165-CABGA package constraints during layout. Evaluate thermal management requirements due to the specified maximum current draw. Verify that the system voltage regulator can maintain the strict 3.135 V to 3.465 V supply range under all load conditions.
Part Context
This SRAM belongs to the 71V25761S series, which provides synchronous memory solutions for demanding digital signal processing and networking tasks. The series is characterized by its wide data bus width and high-frequency operation capabilities, distinguishing it from standard asynchronous or narrower-width synchronous memories in the Renesas portfolio.
Replacement Considerations
The 71V25761S166PFGI is listed as a similar available substitute. Verify electrical and mechanical compatibility before adoption.
ChipApex | Global Electronic Components Supplier








