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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PARALLEL 119PBGA
- Series:-
- Mfr:IDT, Integrated Device Technology Inc
- Package:Bulk
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:200 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:3.1 ns
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Overview
The IDT71V25761S200BG is a synchronous single data rate (SDR) static random-access memory (SRAM) integrated circuit manufactured by Integrated Device Technology Inc. It provides a total storage capacity of 4.5 Mbit, organized as 128K words by 36 bits. The device operates with a maximum clock frequency of 200 MHz and features a typical access time of 3.1 ns. It utilizes a parallel interface and is housed in a 119-pin plastic ball grid array (PBGA) package measuring 14x22 mm. The component requires a supply voltage range of 3.135 V to 3.465 V and functions within an ambient temperature range of 0°C to 70°C.
Feature Summary
- Supports high-performance system speeds through synchronous operation at up to 200 MHz.
- Features a wide 36-bit data bus width for efficient parallel data transfer.
- Utilizes a compact 119-pin PBGA surface-mount package for space-constrained designs.
Applications
- High-speed networking equipment requiring large buffer memories
- Telecommunications infrastructure systems
- Industrial control systems with fast data processing needs
Procurement Notes
Verify the specific suffix 'BG' confirms the 119-PBGA(14x22) package and 3.1 ns speed grade. Confirm RoHS compliance status as historical records indicate non-compliance for some variants. Check current availability as the part may be discontinued or subject to last-time buy notices from Renesas Electronics Corporation.
Selection Notes
Select this component when a 36-bit wide synchronous SRAM interface is required for high-throughput applications. Ensure the design supports the 3.3 V nominal supply voltage and the 0°C to 70°C commercial temperature range. Compare against the 71V25761SA200BG8 if tape-and-reel packaging is preferred over trays.
Part Context
This part belongs to the IDT 71V25761S family of synchronous SDR SRAMs. It shares the same core memory architecture and electrical specifications with other suffixes like SA200BG8, differing primarily in packaging type and reel configuration. The family is designed for applications demanding low latency and high bandwidth data buffering.
Replacement Considerations
The IDT71V25761SA200BG8 is a direct functional equivalent with identical electrical parameters but uses a tape-and-reel (TR) packaging format instead of a tray. Verify pinout compatibility before substitution.
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