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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PARALLEL 100TQFP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:200 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:3.1 ns
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Overview
The IDT71V25761S200PFG is a 4.5 Mbit Synchronous Single Data Rate (SDR) Static Random-Access Memory (SRAM) manufactured by Renesas Electronics Corporation. It features a parallel interface and is organized as 128K x 36 bits. The device supports a maximum clock frequency of 200 MHz with an access time of 3.1 ns. It operates within a supply voltage range of 3.135 V to 3.465 V and is housed in a 119-pin PBGA package measuring 14x22 mm.
Feature Summary
- Supports synchronous single data rate burst read operations for high-speed data transfer
- Includes dedicated write, data, address, and control registers for precise management
- Utilizes 3.3V CMOS technology for standard logic compatibility
Applications
- High-performance embedded systems requiring fast memory access
- Industrial equipment real-time processing engines
- Network infrastructure buffering applications
Procurement Notes
This component is officially listed as obsolete and no longer manufactured by Renesas Electronics Corporation. Verification of availability should be restricted to authorized distributors or secondary market suppliers. Ensure that any sourced units are genuine and match the specific suffix requirements for temperature grade and packaging. Cross-reference part numbers carefully due to potential variations in RoHS compliance status across different production batches.
Selection Notes
Select this component when a 128K x 36 organization is required for wide-data bus architectures. The 200 MHz synchronous interface suits designs needing predictable timing without complex asynchronous handshaking. Verify that the system power supply can maintain the strict 3.135 V to 3.465 V range. Consider the 119-pin BGA footprint constraints during PCB layout planning.
Part Context
The 71V25761 series belongs to Renesas' high-performance synchronous SRAM portfolio, derived from Integrated Device Technology (IDT) products acquired by Renesas. These devices are designed for applications demanding low latency and high throughput, serving as critical memory buffers in communication and computing subsystems where volatile storage speed is paramount.
Replacement Considerations
Official substitutes include the 71V25761S166PFGI. Verify pinout compatibility and electrical specifications before integration.
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