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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PARALLEL 100TQFP
- Series:-
- Mfr:IDT, Integrated Device Technology Inc
- Package:Bulk
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:150 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:3.8 ns
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Overview
The IDT71V2576S150PF is a synchronous single-data-rate (SDR) static random-access memory (SRAM) integrated circuit manufactured by Integrated Device Technology. It provides a total storage capacity of 4.5 Mbit, organized as 128K words by 36 bits. The device operates at a maximum clock frequency of 150 MHz with a typical access time of 3.8 ns. It utilizes a parallel interface and functions within a supply voltage range of 3.135 V to 3.465 V. The component is housed in a 100-pin Thin Quad Flat Package (TQFP) with dimensions of 14x14 mm and supports an operating temperature range from 0°C to 70°C.
Feature Summary
- Supports high-speed data transfer via a 150 MHz synchronous parallel interface
- Provides dense memory storage through a 128K x 36 bit organization structure
- Operates on a standard 3.3 V power supply rail for compatibility
Applications
- High-performance computing systems requiring fast memory access
- Network infrastructure equipment utilizing parallel bus architectures
- Industrial control systems needing reliable synchronous SRAM storage
Procurement Notes
Verify the specific suffix 'PF' confirms the 100-TQFP package and lead-free status if required. Confirm RoHS compliance status as some sources indicate non-conformance. Ensure the 3.3 V supply voltage matches your system design. Check for obsolescence notices or last-buy deadlines associated with this IDT part number before finalizing procurement plans.
Selection Notes
Select this component when a 36-bit wide data path is necessary for system architecture. The 150 MHz speed rating suits applications demanding low-latency synchronous operations. Consider the 100-pin TQFP footprint for PCB layout constraints. Verify that the 3.3 V operating voltage aligns with existing power rails to avoid level shifting requirements.
Part Context
This part belongs to the IDT 71V2576 series of synchronous SRAMs. These devices are designed for high-throughput data buffering and caching in digital logic systems. The series typically offers various speed grades and package options to accommodate different performance and form-factor requirements in embedded and communication applications.
Replacement Considerations
Consult official IDT/Renesas documentation for direct pin-to-pin replacements. Verify electrical compatibility including voltage levels and timing parameters. Cross-reference with current Renesas product portfolios as IDT products may have been rebranded or discontinued.
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