71V30S35TFI8

Overview

The Renesas Electronics Corporation 71V30S35TFI8 is an asynchronous dual-port static random-access memory (SRAM) integrated circuit. It provides a total storage capacity of 8 kilobits, organized as 1K words by 8 bits. The device features a parallel interface with a maximum access time of 35 nanoseconds. It operates within a supply voltage range of 3 volts to 3.6 volts and is housed in a 64-pin Thin Quad Flat Package (TQFP) measuring 10x10 millimeters.

Feature Summary

• Dual-port architecture enabling independent simultaneous read/write operations on separate ports
• Asynchronous operation without requiring a system clock signal for data transfer
• Parallel interface supporting standard digital logic connections

Applications

• Data buffering in high-speed communication systems
• Cache memory implementation in embedded processors
• FIFO buffer applications in industrial control networks

Procurement Notes

Verify the suffix 'S' against the target datasheet revision, as it may indicate specific environmental or material compliance variations compared to other suffixes like 'L'. Confirm RoHS status and moisture sensitivity level requirements prior to ordering. Ensure the 64-TQFP package dimensions match the PCB footprint exactly. Cross-reference the manufacturer part number with official Renesas documentation to confirm current production status and availability constraints.

Selection Notes

Select this component when independent dual-port access is required for concurrent data handling. The 35 ns access speed suits moderate-frequency asynchronous interfaces. Verify that the 3V to 3.6V operating voltage aligns with the system power rails. Consider the 64-TQFP package size for board space limitations. Compare against single-port alternatives if simultaneous port access is not necessary for the design.

Part Context

This part belongs to the 71V30 series of asynchronous dual-port SRAMs manufactured by Renesas Electronics. The series typically offers various access speeds and organization options. The 71V30S35TFI8 specifically targets applications requiring reliable, low-latency memory with independent port control. It serves as a direct replacement for legacy IDT dual-port SRAM devices in compatible designs.

Replacement Considerations

The 71V30L35TFGI8 is listed as a direct substitute. Verify pin compatibility and electrical specifications before substitution. Check for differences in operating temperature ranges and RoHS compliance between the S and L suffix variants.