71V3556S100PFG

Overview

The 71V3556S100PFG is a 4.5 Mbit (128K x 36) synchronous static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It utilizes Zero Bus Turnaround (ZBT) technology to eliminate dead cycles between read and write operations, supporting data transfer rates up to 100 MHz with a 5 ns access time. The device operates on a single 3.3 V power supply with 3.3 V I/O levels and is housed in a 100-pin Thin Quad Flat Package (TQFP).

Feature Summary

• Zero Bus Turnaround (ZBT) architecture eliminates bus turnaround dead cycles for continuous data throughput.
• Single Read/Write control pin simplifies interface logic by removing the need for separate output enable signals.
• Positive clock-edge triggered registers for address, data, and control signals enable fully pipelined operation.
• Four-word burst capability supports both interleaved and linear modes for efficient sequential data access.

Applications

• High-speed digital signal processing systems requiring low-latency memory buffering.
• Network infrastructure equipment utilizing parallel SRAM interfaces.
• Industrial automation controllers needing fast synchronous data storage.
• Embedded systems requiring ZBT performance characteristics.

Procurement Notes

Verify component authenticity through authorized channels as this part may be subject to obsolescence notices. Confirm package markings and datasheet revisions match the specific lot requirements. Ensure voltage levels align with system specifications before integration. Check for moisture sensitivity handling requirements during storage and assembly processes.

Selection Notes

Select this component when ZBT performance is required with a 36-bit data width. Compare against standard synchronous SRAMs if bus turnaround latency is critical. Verify that the 100-pin TQFP footprint fits the board layout constraints. Ensure the 3.3 V operating voltage matches the target system's power domain.

Part Context

This device belongs to the 71V3556 family of synchronous SRAMs designed for high-performance applications. It shares architectural similarities with other ZBT devices but offers specific density and pinout configurations. The product line emphasizes reduced bus turnaround times compared to traditional synchronous memories.

Replacement Considerations

Check for official substitute part numbers from Renesas or qualified second-source manufacturers. Verify electrical compatibility and pin-to-pin equivalence before substitution. Review any engineering change notices regarding package or material updates.