71V3556S100PFGI

71V3556S100PFGI

$7.68
  • Description:IC SRAM 4.5MBIT PARALLEL 100TQFP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:46e3830f64a6 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 4.5MBIT PARALLEL 100TQFP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:4.5Mbit
  • Memory Organization:128K x 36
  • Memory Interface:Parallel
  • Clock Frequency:100 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:100-LQFP
  • Supplier Device Package:100-TQFP (14x14)
  • Access Time:5 ns

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71V3556S100PFGI

Overview

The 71V3556S100PFGI is a synchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It features a storage capacity of 4.5 Mbit, organized as 128K x 36 bits. The device operates with a maximum clock frequency of 100 MHz and provides an access time of 5 ns. It utilizes a parallel interface and requires a supply voltage range of 3.135 V to 3.465 V. The component is housed in a 100-TQFP package measuring 14x14 mm and supports surface-mount installation. It functions within a temperature range of -40°C to +85°C.

Feature Summary

  • Supports Zero Bus Turnaround (ZBT) technology to eliminate dead bus cycles during read-write transitions.
  • Integrates data I/O, address, and control signal registers for synchronized operation.
  • Provides four cycles of data output for a single presented address.

Applications

  • High-speed data buffering in communication systems
  • Cache memory implementation in embedded processors
  • FIFO buffer applications requiring low latency

Procurement Notes

Verify the obsolete status and End-of-Life (EOL) notification dated January 3, 2024, before procurement planning. Confirm that the 100-TQFP package dimensions and pinout match the target design requirements. Ensure compliance with RoHS3 specifications and Moisture Sensitivity Level 3 handling procedures during assembly and storage.

Selection Notes

Select this component when a 128K x 36 organization is required for ZBT synchronous SRAM applications. It is suitable for designs needing 100 MHz operation with 5 ns access times. Consider the 100-pin TQFP form factor for space-constrained surface-mount layouts. Verify power supply constraints align with the specified 3.135 V to 3.465 V range.

Part Context

This part belongs to the 71V3556 family of synchronous SRAMs from Renesas Electronics. It shares architectural similarities with other ZBT devices but is distinguished by its specific 100 MHz speed grade and 128K x 36 density. The family is designed for high-performance memory systems requiring fast turnaround times between bus directions.

Replacement Considerations

No verified public substitute part numbers are available for this component.

71V3556S100PFGI71V3556S100PFGI
$7.68
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