71V3556S100PFGI

$7.68

Description：IC SRAM 4.5MBIT PARALLEL 100TQFP
Series：-
Mfr：Renesas Electronics Corporation
Package：Tray

SKU:46e3830f64a6 Category: Memory IC Brand: Renesas Electronics Corporation

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Product introduction

71V3556S100PFGI is listed in the Memory IC range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is IC SRAM 4.5MBIT PARALLEL 100TQFP. Review the specifications below when checking this part for your BOM.

Memory IC specifications for 71V3556S100PFGI

Description：IC SRAM 4.5MBIT PARALLEL 100TQFP
Series：-
Mfr：Renesas Electronics Corporation
Package：Tray
Memory Type：Volatile
Memory Format：SRAM
Technology：SRAM - Synchronous, SDR (ZBT)
Memory Size：4.5Mbit
Memory Organization：128K x 36
Memory Interface：Parallel
Clock Frequency：100 MHz
Write Cycle Time - Word, Page：-
Voltage - Supply：3.135V ~ 3.465V
Operating Temperature：-40°C ~ 85°C (TA)
Mounting Type：Surface Mount
Package / Case：100-LQFP
Supplier Device Package：100-TQFP (14x14)
Access Time：5 ns

Memory IC datasheet and documents for 71V3556S100PFGI

71V3556S100PFGI

Memory IC Overview

The 71V3556S100PFGI is a synchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It features a storage capacity of 4.5 Mbit, organized as 128K x 36 bits. The device operates with a maximum clock frequency of 100 MHz and provides an access time of 5 ns. It utilizes a parallel interface and requires a supply voltage range of 3.135 V to 3.465 V. The component is housed in a 100-TQFP package measuring 14x14 mm and supports surface-mount installation. It functions within a temperature range of -40°C to +85°C.

Memory IC Feature Summary

Supports Zero Bus Turnaround (ZBT) technology to eliminate dead bus cycles during read-write transitions.
Integrates data I/O, address, and control signal registers for synchronized operation.
Provides four cycles of data output for a single presented address.

Memory IC Applications

High-speed data buffering in communication systems
Cache memory implementation in embedded processors
FIFO buffer applications requiring low latency

Memory IC Procurement Notes

Verify the obsolete status and End-of-Life (EOL) notification dated January 3, 2024, before procurement planning. Confirm that the 100-TQFP package dimensions and pinout match the target design requirements. Ensure compliance with RoHS3 specifications and Moisture Sensitivity Level 3 handling procedures during assembly and storage.

Memory IC Selection Notes

Select this component when a 128K x 36 organization is required for ZBT synchronous SRAM applications. It is suitable for designs needing 100 MHz operation with 5 ns access times. Consider the 100-pin TQFP form factor for space-constrained surface-mount layouts. Verify power supply constraints align with the specified 3.135 V to 3.465 V range.

Memory IC Part Context

This part belongs to the 71V3556 family of synchronous SRAMs from Renesas Electronics. It shares architectural similarities with other ZBT devices but is distinguished by its specific 100 MHz speed grade and 128K x 36 density. The family is designed for high-performance memory systems requiring fast turnaround times between bus directions.