71V3556SA100BGI

Overview

The Renesas Electronics Corporation 71V3556SA100BGI is a static random-access memory device organized as 128K x 36, providing a total storage capacity of 4.5 Mbit. It operates with a maximum clock frequency of 100 MHz and features an access time of 5 ns. The component utilizes a parallel interface and is powered by a voltage range between 3.135 V and 3.465 V. It is housed in a 119-pin PBGA package measuring 14x22 mm, designed for surface mount installation. The device supports synchronous single data rate operation within an industrial temperature range of -40°C to +85°C.

Feature Summary

• Synchronous ZBT architecture eliminates dead bus cycles during read-to-write or write-to-read transitions.
• Self-timed write cycle controlled by global write control and byte write enable signals.
• Power-down mode managed via the ZZ input pin to reduce standby power consumption.

Applications

• High-performance networking equipment requiring fast data buffering
• Industrial automation systems needing reliable synchronous memory
• Telecommunications infrastructure utilizing pipeline SRAM

Procurement Notes

This component has reached end-of-life status, with discontinuance notifications issued by the manufacturer. Availability is restricted, and sourcing new units may be difficult. Verify current stock levels with authorized distributors carefully. Consider lifecycle management strategies due to potential obsolescence. Ensure compliance with RoHS non-compliant status if required by specific regulatory frameworks.

Selection Notes

Select this part when a 36-bit wide synchronous SRAM interface is required for system integration. The 100 MHz speed grade suits applications needing moderate latency without higher-frequency costs. Verify that the 119-pin PBGA footprint matches the PCB design constraints. Confirm that the 3.3V core voltage aligns with the target system power rails and I/O requirements.

Part Context

The 71V3556SA100BGI belongs to the 71V3556 series of synchronous SRAMs from Renesas Electronics. This series is characterized by zero-burst technology (ZBT) designed to optimize performance in high-speed digital systems. The device represents a specific speed bin within the broader family of 3.3V synchronous memories offered by the manufacturer.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Due to the end-of-life status, alternative components must be evaluated based on functional equivalence rather than direct cross-reference lists.