71V3556SA100BQ

71V3556SA100BQ

$7.77
  • Description:IC SRAM 4.5MBIT PAR 165CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:737f484d9cd3 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 4.5MBIT PAR 165CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:4.5Mbit
  • Memory Organization:128K x 36
  • Memory Interface:Parallel
  • Clock Frequency:100 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-TBGA
  • Supplier Device Package:165-CABGA (13x15)
  • Access Time:5 ns

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71V3556SA100BQ

Overview

The Renesas 71V3556SA100BQ is a 4.5Mb (128K x 36) synchronous ZBT SRAM IC in a 165-CABGA package. It operates at a clock frequency of 100 MHz with a 5 ns access time. The device uses a 3.135V to 3.465V core supply and supports parallel interface communication.

Feature Summary

  • Zero Bus Turnaround (ZBT) architecture eliminates dead cycles between read and write operations
  • Fully pipelined design with positive clock-edge triggered registers for address, data, and control signals
  • Supports four-word burst capability in either interleaved or linear modes
  • Includes individual byte write control for precise data masking

Applications

  • High-speed networking equipment requiring low-latency buffering
  • Telecommunications systems utilizing pipeline architectures
  • Industrial automation controllers needing fast memory access

Procurement Notes

Verify the specific suffix against official documentation, as variations like BQ8 or BQI indicate differences in packaging format and operating temperature range. Confirm RoHS compliance status, as some variants are non-compliant. Check current lifecycle status, as this component family has been subject to discontinuation notices.

Selection Notes

Select this part when system requirements demand high throughput without bus turnaround penalties. Ensure the design accommodates the 165-ball CABGA footprint and provides adequate thermal management for the specified power dissipation levels within the target operating temperature range.

Part Context

This component belongs to the 71V3556 series of Zero Bus Turnaround Synchronous SRAMs. It is designed to replace asynchronous memories in high-performance applications by providing faster effective data rates through internal pipelining and zero wait-state transitions.

Replacement Considerations

Direct substitutes include other 128K x 36 ZBT SRAMs from the same manufacturer family, such as the 71V3556SA133 variant for higher speed requirements, provided pin compatibility and voltage levels match.

71V3556SA100BQ71V3556SA100BQ
$7.77
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