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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PAR 165CABGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:100 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:165-TBGA
- Supplier Device Package:165-CABGA (13x15)
- Access Time:5 ns
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Overview
The Renesas Electronics Corporation 71V3556SA100BQG is a synchronous single data rate zero bus turnaround (ZBT) static random-access memory (SRAM) integrated circuit. It provides a total storage capacity of 4.5 megabits, organized as 128 kilowords by 36 bits. The device operates with a maximum clock frequency of 100 MHz and features a typical access time of 5 nanoseconds. It requires a supply voltage range between 3.135 volts and 3.465 volts. The component utilizes a parallel interface and is housed in a 165-contact cavity ball grid array package measuring 13 by 15 millimeters.
Feature Summary
- Synchronous operation utilizing a single data rate architecture for high-speed data transfer
- Zero bus turnaround capability to minimize latency during read-to-write or write-to-read transitions
- Parallel interface supporting wide 36-bit data paths for efficient system integration
Applications
- High-performance networking equipment requiring fast buffer memory
- Telecommunications infrastructure systems
- Industrial control applications needing rapid data processing
Procurement Notes
Verify the specific suffix BQG against official Renesas documentation to confirm package dimensions and pinout compatibility. Confirm RoHS compliance status as some variants may not meet current environmental standards. Check for active discontinuation notices or end-of-life notifications prior to finalizing procurement plans.
Selection Notes
Select this component when a 36-bit wide data path is required for synchronous memory applications. Ensure the design supports the specified 3.3-volt I/O levels and the 165-ball BGA footprint constraints. Verify that the system timing requirements align with the 5-nanosecond access specification at the target operating frequency.
Part Context
This part belongs to the 71V3556 family of synchronous ZBT SRAMs from Renesas Electronics. The family offers various speed grades and packaging options to suit different performance and form factor requirements within embedded memory solutions.
Replacement Considerations
Consult official Renesas cross-reference guides for verified substitutes. Consider parts such as IDT71V3556SA100BQG if available, ensuring identical electrical characteristics and pin configurations.
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