71V3556SA100BQGI

Memory IC Overview

The Renesas Electronics Corporation 71V3556SA100BQGI is a synchronous, single data rate (SDR) Zero Bus Turnaround (ZBT) static random-access memory (SRAM). It features a storage capacity of 4.5 Mbit organized as 128K x 36 bits. The device operates with a maximum clock frequency of 100 MHz and provides an access time of 5 ns. It utilizes a parallel interface and requires a supply voltage between 3.135 V and 3.465 V. The component is housed in a 165-CABGA package measuring 13x15 mm.

Memory IC Feature Summary

• Zero Bus Turnaround architecture eliminates dead cycles during bus turnaround between read and write operations.
• Internally synchronized output buffer enable removes the requirement for external OE control.
• Positive clock-edge triggered registers for address, data, and control signals support fully pipelined applications.
• Provides four-word burst capability supporting both interleaved and linear modes.

Memory IC Applications

• High-performance embedded systems requiring fast memory access
• Network infrastructure equipment
• Industrial automation controllers

Memory IC Procurement Notes

Verify the exact suffix against official Renesas documentation to confirm package type and temperature range specifications. Confirm RoHS compliance status as some variants may not meet current environmental standards. Check for active discontinuation notices or product change notifications prior to finalizing procurement plans.

Memory IC Selection Notes

Select this component when system design demands high-speed synchronous memory with minimal latency during bus transitions. Ensure the host processor supports ZBT protocols and 3.3V core voltage levels. Verify that the 165-CABGA footprint aligns with the PCB layout constraints and thermal management requirements.

Memory IC Part Context

This part belongs to the 71V3556 family of synchronous SRAMs designed for high-throughput data processing. It shares architectural similarities with other ZBT devices but offers specific density and speed characteristics tailored for complex digital signal processing tasks.

Memory IC Replacement Considerations

Consult official Renesas substitution guides for verified alternatives. Cross-reference pinouts and electrical parameters carefully before integrating any substitute components into existing designs.