71V3556SA133BG

71V3556SA133BG

$7.77
  • Description:IC SRAM 4.5MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:47c0029ba402 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IC SRAM 4.5MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:4.5Mbit
  • Memory Organization:128K x 36
  • Memory Interface:Parallel
  • Clock Frequency:133 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:4.2 ns

Download product information

71V3556SA133BG

Overview

The Renesas Electronics Corporation 71V3556SA133BG is a static random-access memory (SRAM) integrated circuit organized as 128K x 36, providing a total storage capacity of 4.5 Mbit. It operates with a maximum clock frequency of 133 MHz and features an access time of 4.2 ns. The device utilizes a parallel interface and is housed in a 119-pin plastic ball grid array (PBGA) package measuring 14x22 mm. It requires a supply voltage between 3.135 V and 3.465 V, with a maximum power consumption of 310 mA.

Feature Summary

  • Zero Bus Turnaround (ZBT) technology eliminates dead cycles between read and write operations to maximize throughput.
  • Synchronous Single Data Rate architecture with internally synchronized output buffer enable for simplified control.
  • Fully pipelined design using positive clock-edge triggered registers for address, data, and control signals.
  • Supports four-word burst capabilities in either interleaved or linear modes.

Applications

  • High-speed data buffering in telecommunications equipment
  • Cache memory implementation in network routers and switches
  • Data acquisition systems requiring fast synchronous access

Procurement Notes

This component has reached end-of-life status, with discontinuation confirmed by manufacturer notification dated January 3, 2024. Current availability is restricted, and the product is no longer actively manufactured. Buyers should verify final stock levels with authorized distributors and consider alternative sourcing strategies due to limited supply constraints.

Selection Notes

Select this part when a 128K x 36 organization is required for synchronous applications. Ensure the system design accommodates the 119-PBGA(14x22) footprint and the specific 3.3V I/O voltage requirements. Verify that the 133 MHz clock speed meets the target application's timing constraints before integration.

Part Context

The 71V3556SA133BG belongs to the IDT/Renesas 71V3556 family of Zero Bus Turnaround SRAMs. This series is designed to eliminate bus turnaround delays inherent in traditional asynchronous memories. The 'SA' suffix typically denotes specific speed grades and package variations within the broader 71V3556 product line.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Due to the end-of-life status, direct pin-to-pin replacements from other manufacturers require independent verification against official datasheets.

71V3556SA133BG71V3556SA133BG
$7.77
Buy Now