71V3556SA133BG8

71V3556SA133BG8

$7.06
  • Description:IC SRAM 4.5MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:d3e9bae1b389 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 4.5MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:4.5Mbit
  • Memory Organization:128K x 36
  • Memory Interface:Parallel
  • Clock Frequency:133 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:4.2 ns

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71V3556SA133BG8

Overview

The IDT71V3556SA133BG8 is a 4.5Mb synchronous SRAM organized as 128K x 36, manufactured by Renesas Electronics Corporation. It operates at a clock frequency of 133 MHz with an access time of 4.2 ns. The device utilizes a parallel interface and requires a supply voltage between 3.135V and 3.465V. It is housed in a 119-pin PBGA package measuring 14x22 mm. The component supports surface mount installation and functions within a commercial temperature range of 0°C to 70°C.

Feature Summary

  • Zero Bus Turnaround (ZBT) technology eliminates dead cycles during bus turnaround between read and write operations.
  • Internally synchronized output buffer enable removes the requirement for external OE control.
  • Positive clock-edge triggered registers for address, data, and control signals support fully pipelined applications.
  • Provides four-word burst capability in either interleaved or linear modes.

Applications

  • High-performance processor secondary cache systems
  • Network infrastructure equipment requiring low-latency memory
  • Industrial automation controllers
  • Telecommunications base stations

Procurement Notes

Verify RoHS compliance status as the component may not meet current environmental regulations. Confirm end-of-life status and availability through authorized distributors. Ensure the 119-pin BGA footprint matches the target PCB design. Validate that the 3.3V core and 2.5V I/O voltage requirements align with system power rails. Check for moisture sensitivity level constraints during storage and handling.

Selection Notes

Select this part when ZBT performance is required for 36-bit wide data paths. Compare against asynchronous alternatives if clock distribution is complex. Consider the 119-pin BGA package size for board space limitations. Verify compatibility with 2.5V I/O levels if interfacing with lower voltage logic. Evaluate thermal dissipation capabilities within the 0°C to 70°C operating range.

Part Context

This component belongs to the IDT 71V3556 family of synchronous SRAMs. It shares architectural similarities with other ZBT devices but offers specific speed grades and packaging options. The 71V3556 series is designed for high-throughput applications where bus turnaround latency impacts system efficiency. It complements Renesas' portfolio of high-speed memory solutions for embedded systems.

Replacement Considerations

Consult official substitution guides for equivalent speed grades. Verify pinout compatibility before replacing with similar BGA packages. Ensure voltage tolerances match existing circuit designs. Check for updated RoHS compliance in replacement parts.

71V3556SA133BG871V3556SA133BG8
$7.06
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