71V3556SA133BGG

71V3556SA133BGG

$8.51
  • Description:IC SRAM 4.5MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:fb9fd0041822 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 4.5MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:4.5Mbit
  • Memory Organization:128K x 36
  • Memory Interface:Parallel
  • Clock Frequency:133 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:4.2 ns

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71V3556SA133BGG

Overview

The 71V3556SA133BGG is a synchronous static random-access memory (SRAM) device manufactured by Renesas Electronics Corporation. It features a memory organization of 128K x 36 bits, providing a total capacity of 4.5 Mbit. The component operates with a maximum clock frequency of 133 MHz and achieves an access time of 4.2 ns. It utilizes a parallel interface and requires a supply voltage ranging from 3.135 V to 3.465 V. The device is housed in a 119-pin PBGA package measuring 14x22 mm.

Feature Summary

  • Zero Bus Turnaround (ZBT) architecture eliminates dead cycles between read and write operations
  • Pipelined design with internally synchronized output buffer enable for simplified control
  • Supports four-word burst capability in either interleaved or linear modes
  • Includes individual byte write control pins for precise data masking

Applications

  • High-performance processor secondary cache systems
  • Network routing and switching equipment buffers
  • Industrial automation controller memory storage
  • Telecommunications base station signal processing

Procurement Notes

Verify the exact suffix designation as official documentation lists this part under 71V3556SA133BGGI8. Confirm current availability status as the product line may be subject to end-of-life notices. Ensure compatibility with 3.3V core and 2.5V I/O requirements during integration planning.

Selection Notes

Select this component for applications requiring high-speed synchronous data buffering with minimal turnaround latency. The 128K x 36 organization suits wide-data bus architectures. Verify that the system supports the required 133 MHz clock speed and that the 119-pin BGA footprint fits the PCB layout constraints.

Part Context

This SRAM belongs to the 71V3556 family of Zero Bus Turnaround devices designed for high-throughput data handling. It complements other Renesas memory solutions by offering pipelined performance without the complexity of asynchronous timing margins. The family is engineered for embedded systems demanding reliable, fast memory access.

Replacement Considerations

Check for direct pin-compatible upgrades within the 71V3556 series. Evaluate alternative ZBT SRAMs from other manufacturers if sourcing is restricted due to obsolescence. Ensure any substitute matches the 128K x 36 density and 133 MHz operational frequency.

71V3556SA133BGG71V3556SA133BGG
$8.51
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