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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PAR 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:133 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:4.2 ns
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Overview
The Renesas Electronics Corporation 71V3556SA133BGGI is a static random-access memory (SRAM) device organized as 128K x 36, providing a total storage capacity of 4.5 Mbit. It operates with a maximum clock frequency of 133 MHz and features an access time of 4.2 ns. The component utilizes a parallel interface and is housed in a 119-pin PBGA package measuring 14x22 mm. Power supply requirements range from 3.135 V to 3.465 V, with a maximum power consumption of 310 mA. The device supports an operating temperature range from -40°C to 85°C.
Feature Summary
- Zero Bus Turnaround (ZBT) technology eliminates dead cycles between read and write operations for improved throughput.
- Synchronous Single Data Rate (SDR) architecture with internally synchronized output buffer enable simplifies control logic.
- Positive clock-edge triggered address, data, and control signal registers support fully pipelined applications.
Applications
- High-performance embedded systems requiring fast synchronous memory access
- Network infrastructure equipment utilizing ZBT SRAM for packet buffering
- Industrial control systems operating within extended temperature ranges
Procurement Notes
Verify the current lifecycle status before procurement, as official documentation indicates this specific part number has reached End-of-Life (EOL). Confirm RoHS compliance details, as some variants in this series may not meet current environmental standards. Ensure that the 119-PBGA package dimensions align with existing PCB footprints. Validate that the 3.3V I/O voltage levels are compatible with the target system's logic interfaces. Check for moisture sensitivity level (MSL 3) handling requirements during assembly.
Selection Notes
Select this component when zero bus turnaround performance is critical for reducing latency in synchronous memory interfaces. The 128K x 36 organization suits applications requiring wide data paths without excessive pin counts. Consider the 119-PBGA package for high-density surface-mount designs. Ensure the design accommodates the specified 3.3V power supply tolerance and thermal dissipation needs for the -40°C to 85°C operating range.
Part Context
This device belongs to the 71V3556 family of 3.3V Synchronous ZBT SRAMs manufactured by Renesas Electronics. The family includes various speed grades and package options, such as the 71V3556SA166BQGI. These components are designed to replace asynchronous SRAMs in high-speed digital systems, offering pipelined performance while maintaining simple single-chip operation.
Replacement Considerations
Public confirmed substitute part numbers: None available. This product has been officially declared End-of-Life (EOL) by the manufacturer.
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