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Product Detailed Parameters
- Description:IC SRAM 4.5MBIT PAR 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:4.5Mbit
- Memory Organization:128K x 36
- Memory Interface:Parallel
- Clock Frequency:133 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:4.2 ns
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Overview
The Renesas Electronics Corporation 71V3556SA133BGI is a static random-access memory (SRAM) device organized as 128K x 36, providing a total storage capacity of 4.5 Mbit. It operates with a maximum clock frequency of 133 MHz and features an access time of 4.2 ns. The component utilizes a parallel interface and requires a supply voltage ranging from 3.135 V to 3.465 V. It is housed in a 119-pin plastic ball grid array (PBGA) package measuring 14x22 mm. The device supports an operating temperature range from -40°C to +85°C.
Feature Summary
- Synchronous Single Data Rate Zero Bus Turnaround architecture eliminates dead cycles between read and write operations.
- Internally synchronized output buffer enable removes the requirement for external output enable control signals.
- Positive clock-edge triggered registers for address, data, and control signals support fully pipelined applications.
- Provides four-word burst capability in either interleaved or linear modes for efficient data transfer.
Applications
- High-speed digital signal processing systems requiring low-latency memory access
- Network infrastructure equipment utilizing parallel SRAM interfaces
- Industrial control systems operating within extended temperature ranges
Procurement Notes
Verify component authenticity through authorized distributors due to end-of-life status. Confirm RoHS compliance requirements as the part may not meet current environmental standards. Validate package integrity upon receipt, as moisture sensitivity level 3 requires proper handling. Check for specific manufacturing date codes if long-term reliability is critical for the application design.
Selection Notes
Select this component when synchronous ZBT performance at 133 MHz is required with a 36-bit data width. Ensure the system design accommodates the 119-pin PBGA footprint and thermal characteristics. Verify that the 3.3V core voltage and 3.3V I/O levels match the host controller specifications. Consider the end-of-life status when planning for future production runs and potential obsolescence risks.
Part Context
This part belongs to the 71V3556 family of synchronous SRAMs designed for high-performance embedded applications. The SA suffix indicates specific speed binning and packaging variations within the series. Renesas Electronics manufactures this line to provide reliable memory solutions for complex digital systems requiring fast, deterministic data access without bus turnaround delays.
Replacement Considerations
Public confirmed substitute part numbers are not available. The product is listed as obsolete with discontinuation notices. Designers should evaluate alternative synchronous SRAM families with compatible pinouts and electrical specifications for migration purposes.
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