71V3556SA133BGI8

Overview

The Renesas Electronics Corporation 71V3556SA133BGI8 is a static random-access memory device organized as 128K x 36, providing a total storage capacity of 4.5 Mbit. It operates with a maximum clock frequency of 133 MHz and features an access time of 4.2 ns. The component utilizes a parallel interface and requires a supply voltage between 3.135 V and 3.465 V. Maximum power consumption is specified at 310 mA. It supports surface mount installation in a 119-pin PBGA package measuring 14x2 mm.

Feature Summary

• Zero Bus Turnaround (ZBT) technology eliminates dead cycles between read and write operations
• Synchronous Single Data Rate architecture with internally synchronized output buffer enable
• Positive clock-edge triggered address, data, and control signal registers for pipelined applications
• Supports four-word burst capability in interleaved or linear modes

Applications

• High-speed data buffering in telecommunications equipment
• Cache memory implementation in network processing systems
• Data storage in industrial automation controllers
• Signal processing applications requiring low-latency access

Procurement Notes

Verify current availability status as the product may be subject to end-of-life notices. Confirm RoHS compliance requirements against specific project standards, noting that some variants in this series have different environmental certifications. Ensure packaging type matches assembly line capabilities, as options include trays or reels depending on the specific suffix. Validate lead times with authorized distributors due to potential supply constraints associated with mature semiconductor products.

Selection Notes

Select this component when zero bus turnaround performance is critical for system throughput. Compare access times and clock frequencies against alternative speeds within the 71V3556SA family to match processor bus requirements. Verify package compatibility with existing PCB footprints, specifically the 119-pin PBGA configuration. Consider thermal management needs based on the specified maximum operating temperature range and power dissipation characteristics.

Part Context

This part belongs to the Renesas 71V3556SA series of synchronous ZBT SRAMs. The series offers various speed grades and package options to support diverse embedded memory applications. The SA suffix typically denotes specific speed binning or internal organization variations within the broader 71V3556 product line. These devices are designed to replace asynchronous SRAMs in high-performance systems requiring deterministic timing.

Replacement Considerations

Check for direct pin-compatible substitutes within the same Renesas series, such as the 71V3556SA133BGGI8, which shares similar electrical specifications but may differ in packaging or environmental compliance. Verify functional equivalence regarding burst modes and control signals before substitution.